Patents by Inventor Susumu Ohmi
Susumu Ohmi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9818911Abstract: A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.Type: GrantFiled: August 31, 2016Date of Patent: November 14, 2017Assignee: Sharp Kabushiki KaishaInventors: Hiroaki Yamamoto, Susumu Ohmi, Yufeng Weng, Kiminori Tanabe
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Patent number: 9741900Abstract: A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.Type: GrantFiled: December 18, 2014Date of Patent: August 22, 2017Assignee: Sharp Kabushiki KaishaInventors: Susumu Ohmi, Takashi Kurisu, Masayuki Nagata
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Publication number: 20170098737Abstract: A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above thea first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.Type: ApplicationFiled: December 18, 2014Publication date: April 6, 2017Inventors: Susumu OHMI, Takashi KURISU, Masayuki NAGATA
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Publication number: 20160372632Abstract: A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.Type: ApplicationFiled: August 31, 2016Publication date: December 22, 2016Applicant: Sharp Kabushiki KaishaInventors: Hiroaki YAMAMOTO, Susumu OHMI, Yufeng WENG, Kiminori TANABE
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Patent number: 9466763Abstract: A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.Type: GrantFiled: June 10, 2014Date of Patent: October 11, 2016Assignee: Sharp Kabushiki KaishaInventors: Hiroaki Yamamoto, Susumu Ohmi, Yufeng Weng, Kiminori Tanabe
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Publication number: 20150349202Abstract: A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.Type: ApplicationFiled: June 10, 2014Publication date: December 3, 2015Applicant: Sharp Kabushiki KaishaInventors: Hiroaki YAMAMOTO, Susumu OHMI, Yufeng WENG, Kiminori TANABE
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Publication number: 20120220122Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Inventors: Daisuke HANAOKA, Masafumi KONDO, Susumu OHMI, Kunihiro TAKATANI, Yoshika KANEKO
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Patent number: 8203152Abstract: The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.Type: GrantFiled: October 27, 2005Date of Patent: June 19, 2012Assignee: Sharp Kabushiki KaishaInventors: Daisuke Hanaoka, Masafumi Kondo, Susumu Ohmi, Kunihiro Takatani, Yoshika Kaneko
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Patent number: 7892860Abstract: A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.Type: GrantFiled: March 28, 2008Date of Patent: February 22, 2011Assignee: Sharp Kabushiki KaishaInventors: Susumu Ohmi, Katsuhiko Kishimoto
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Patent number: 7842956Abstract: On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.Type: GrantFiled: December 11, 2006Date of Patent: November 30, 2010Assignee: Sharp Kabushiki KaishaInventors: Susumu Ohmi, Kunihiro Takatani, Fumio Yamashita, Mototaka Taneya
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Publication number: 20090323746Abstract: In one embodiment of the present invention, in a method of fabricating a nitride semiconductor laser device, after an insulating film is formed on a layered nitride semiconductor portion on a substrate, a resist mask is formed on the insulating film, such that the insulating film is exposed near a position where an exit-side cleaved facet and a reflection-side cleaved facet are formed. The insulating film near a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed is then removed, and, after the resist mask is removed, cleavage is performed. As a result, even if the substrate and the layered nitride semiconductor portion are cleaved at a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulating film is not broken. This helps prevent fragments produced from the insulating film from being adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.Type: ApplicationFiled: April 12, 2006Publication date: December 31, 2009Inventors: Susumu Ohmi, Takeshi Kamikawa
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Patent number: 7512168Abstract: A nitride semiconductor laser device of the present invention has an electrical connection point which is provided outside of a pair of trenches in the surface of an upper electrode layer so as to make an electrical connection to the outside. The thickness between the surface of the upper electrode layer and a nitride semiconductor growth layer in the electrical connection point is larger than the thickness between the upper electrode layer and the nitride semiconductor growth layer immediately above a ridge.Type: GrantFiled: August 26, 2005Date of Patent: March 31, 2009Assignee: Sharp Kabushiki KaishaInventor: Susumu Ohmi
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Publication number: 20080240188Abstract: A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.Type: ApplicationFiled: March 28, 2008Publication date: October 2, 2008Inventors: Susumu Ohmi, Katsuhiko Kishimoto
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Publication number: 20070131960Abstract: On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.Type: ApplicationFiled: December 11, 2006Publication date: June 14, 2007Inventors: Susumu Ohmi, Kunihiro Takatani, Fumio Yamashita, Mototaka Taneya
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Publication number: 20060091501Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.Type: ApplicationFiled: October 27, 2005Publication date: May 4, 2006Inventors: Daisuke Hanaoka, Masafumi Kondo, Susumu Ohmi, Kunihiro Takatani, Yoshika Kaneko
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Publication number: 20060043409Abstract: A nitride semiconductor laser device of the present invention has an electrical connection point which is provided outside of a pair of trenches in the surface of an upper electrode layer so as to make an electrical connection to the outside. The thickness between the surface of the upper electrode layer and a nitride semiconductor growth layer in the electrical connection point is larger than the thickness between the upper electrode layer and the nitride semiconductor growth layer immediately above a ridge.Type: ApplicationFiled: August 26, 2005Publication date: March 2, 2006Inventor: Susumu Ohmi
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Patent number: 6618416Abstract: An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer.Type: GrantFiled: June 22, 2001Date of Patent: September 9, 2003Assignee: Sharp Kabushiki KaishaInventors: Mototaka Taneya, Kunihiro Takatani, Susumu Ohmi