Abstract: A processing unit structure 1 a plurality of processing units 2, . . . , assembled together continuously in a horizontal direction, wherein a transfer portion 3 is provided on the top of each processing unit 2, . . . , for transferring the plate-like material to be processed between adjacent one of the processing units. A transfer device, such as a shuttle (SH) is provided in each of the transfer portions 3. Each processing unit 2 performs a series of processes on the plate-like material and is constructed with processing blocks 4 and 4 and a transfer portion 3 in the form of a transfer robot (R) positioned between the processing blocks 4 and 4. Further, each processing unit 2. . . is independent from one another so that it is possible to selectively add and remove different ones of the processing units with respect to the processing unit structure 1.

Abstract: Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.

Abstract: A face brightening device for use with vehicles comprising optical fibers and a light source wherein the light source is attached to one or both ends of the optical fibers to brighten those notched faces of the optical fibers which form letters, patterns, brightening faces and the like needed inside and outside the vehicles. The face brightening device can be made smaller in size, simpler in construction, lighter in weight, more saving in space, and much more excellent in water-proofness, heat-resistance, weather- proofness and insulation.

Abstract: A Schottky barrier type compound semiconductor device includes an N type compound semiconductor substrate, an insulation layer having a penetrating hole through which part of the substrate is exposed, and a layer of high melting metal formed through the penetrating hole to form a Schottky barrier with the substrate. The insulation layer includes a phosphosilicate glass layer containing phosphorus at a concentration of 1.times.10.sup.21 /cm.sup.3 or more and contacting the substrate.

Abstract: A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal layer of platinum or palladium formed on the first metal layer and a third metal layer superposed on said second metal layer.