Abstract: A wiring layer transfer composite constituted by a laminate composed of a carrier layer, a barrier layer and a wiring-forming layer, the barrier layer being a continuous layer substantially free from defects, can be produced by (a) preparing a first Cu-based metal foil having an average thickness of 50 &mgr;m or less and an average surface roughness Rz of 5 &mgr;m or less in both surfaces for the carrier layer; (b) preparing a second Cu-based metal foil having an average thickness of 20 &mgr;m or less and an average surface roughness Rz of 5 &mgr;m or less in both surfaces for the wiring-forming layer; (c) vapor-depositing a metal having different etchability from that of Cu onto at least one of the first metal foil and the second metal foil to form the barrier layer having an average thickness of 1 &mgr;m or less; and (b) pressure-welding both metal foils via the barrier layer.

Abstract: A heat spreader for a semiconductor device is constituted by an integral laminate of alternatingly stacked and diffusion-bonded Fe--Ni alloy sheets and copper-group metal sheets, the laminate having a one-directional stripe pattern of the Fe--Ni alloy sheets and the copper-group metal sheets, which appears on a planar surface on which a silicon chip is disposed. It is produced by (a) alternatingly stacking Fe--Ni alloy sheets and copper-group metal sheets, (b) hot isostatic-pressing the resulting stack of the metal sheets to form a slab, (c) rolling the slab vertically to the laminating direction of the metal sheets to form an integrated stripe-pattern laminate, and (d) cutting the integrated stripe-pattern laminate to a predetermined shape.

Abstract: A heat spreader for a semiconductor device is constituted by an integral laminate of alternatingly stacked and diffusion-bonded Fe-Ni alloy sheets and copper-group metal sheets, the laminate having a one-directional stripe pattern of the Fe-Ni alloy sheets and the copper-group metal sheets, which appears on a planar surface on which a silicon chip is disposed. It is produced by (a) alternatingly stacking Fe-Ni alloy sheets and copper-group metal sheets, (b) hot isostatic-pressing the resulting stack of the metal sheets to form a slab, (c) rolling the slab vertically to the laminating direction of the metal sheets to form an integrated stripe-pattern laminate, and (d) cutting the integrated stripe-pattern laminate to a predetermined shape.

Abstract: The present invention relates to a wire bonding method and a wire bonding apparatus employing a coated wire in which the surface of a metal wire is coated with an insulator, and a semiconductor device produced by the bonding method. The present invention includes forming a mixed gas of (1) a combustible gas and (2) a temperature controlling gas for lowering the combustion temperature of the mixture; and removing the insulator coating material from the coated wire at a bonding part of the coated wire, so as to denude the surface of a metal wire, by the use of flames produced by the combustion of the combustible gas of the mixed gas. The removal of the insulator is executed by an insulator removal torch.

Abstract: The present invention relates to a wire bonding method and a wire bonding apparatus employing a coated wire in which the surface of the metal wire is coated with an insulator, and a semiconductor device produced by the bonding method. The present invention includes forming a metal ball on the front end of the coated wire, e.g., by arc discharge; joining the metal ball to an external terminal of a semiconductor chip; bringing the rear end of the coated wire into contact with an external lead and destroying the insulator coating where the coated wire contacts the lead; and joining the metal wire at the rear end of the coated wire to the lead. The metal wire is connected to a common ground with the bonding device, during the arc discharge, and the wire is positive relative to the discharge electrode. Moreover, the melting and shrinking insulator of the coated wire is blown away, and insulator globes can be prevented from being formed in the coated wire, so that bonding defects are avoidable.

Abstract: The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delivering the wire after ball bonding at a first bonding point.

Abstract: A semiconductor device is fabricated by placing a semiconductor chip with at least one bonding pad on the bonding stage of a wire bonder. A coated wire on a spool is passed through a bore in a bonding capillary so that one end of the wire projects from the lower tip of the capillary. An electrical arc discharge is created between the wire tip projecting from the capillary and a discharge electrode by applying a first electric potential to this wire tip through the opposite end of the wire and applying a second electric potential to the electrode. A ball is formed on the end of the wire and this ball is bonded to the pad with the lower tip of the capillary.

Abstract: The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor.In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.

Abstract: A method of bonding an insulated and coated wire which has an insulated coating on the outside of an electrically conductive wire is disclosed which consists in connecting one end of said insulated and coated wire to the anode side of an arc power source and connecting a discharge torch to the cathode side of said arc power source with an arc discharge performed between the tip of said insulated and coated wire and the discharge torch to form a ball at said end, and said ball being positioned with respect to the bonding pad of an electrically conductive electrode and bonding being performed with a specified pressure applied to said ball.

Abstract: A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved.

Abstract: A resin encapsulated type semiconductor device is manufactured by using a lead frame in which a stress relaxation portion is formed near the connection portion between the tab suspending the lead and the tab according to this invention, whereby stress concentration to the tab at the connection portion of the tab suspending lead can be prevented even when the tab as the pellet mounting portion is thermally expanded thereby preventing crackings from resulting in the semiconductor pellets.

Abstract: A wire bonder useful for assembling electronic components with fine metallic wire. The wire bonder in accordance with this invention forms a ball at a free end of a bonding wire by utilizing discharge arc and thereafter bonds this ball to a component. The wire bonder of the invention has a construction in which the atmosphere between the tip of the bonding wire and a discharge electrode disposed adjacent the tip of the bonding wire can be maintained as a reducing gas atmosphere. Especially when an aluminum wire, which is an easily oxidizable thin metallic wire, is used as the bonding wire, the wire bonder of the present invention improves the sphericity of the ball formed by discharge arc as well as the bondability.

Abstract: A semiconductor device comprising a metallic base plate whose side surfaces are formed with cut-away portions having circular arc-shaped parts, a semiconductor element which is connected to the surface of the metallic base plate, and a resin which lies in contact with the cut-away portions and which seals the semiconductor element.

Abstract: A method of providing a silicon semiconductor pellet with a heat sink and a semiconductor device with such a heat sink. The heat sink to which the pellet is bonded with a eutectic alloy of gold and silicon interposed therebetween consists mainly of copper and contains a small amount of a metal other than copper and has been subjected to an annealing treatment.

Abstract: When a resin-sealed type semiconductor device having a heat dissipating plate is mounted on a mounting plate by means of screws or the like, means are provided to prevent occurrence of cracks in the resin sealing portion and semiconductor circuit elements embodied therein. To this end, the resin body, heat dissipating plate or mounting plate is thickened at portions thereof where screw receiving apertures are formed. Alternatively, washer or the like member may be employed.