Abstract: An apparatus for manufacturing a single crystal according to a Czochralski method, including: a main chamber housing crucibles for a raw-material melt and heater for heating the raw-material melt; a pulling chamber at an upper portion of the main chamber and a single crystal pulled from the raw-material melt; a cooling cylinder extending from a ceiling portion of the main chamber toward a surface of the raw-material melt to surround the single crystal; an auxiliary cooling cylinder inside the cooling cylinder; and a diameter-enlargement member to fit into the auxiliary cooling cylinder. The auxiliary cooling cylinder has a slit penetrating in an axial direction to come into close contact with the cooling cylinder by pushing the diameter-enlargement member into the auxiliary cooling cylinder to enlarge the diameter of the auxiliary cooling cylinder. This enables efficient cooling of a growing single crystal and increases the growth rate of the single crystal.

Abstract: An apparatus for manufacturing a single crystal according to a Czochralski method, including: a main chamber housing crucibles for a raw-material melt and heater for heating the raw-material melt; a pulling chamber at an upper portion of the main chamber and a single crystal pulled from the raw-material melt; a cooling cylinder extending from a ceiling portion of the main chamber toward a surface of the raw-material melt to surround the single crystal; an auxiliary cooling cylinder inside the cooling cylinder; and a diameter-enlargement member to fit into the auxiliary cooling cylinder. The auxiliary cooling cylinder has a slit penetrating in an axial direction to come into close contact with the cooling cylinder by pushing the diameter-enlargement member into the auxiliary cooling cylinder to enlarge the diameter of the auxiliary cooling cylinder. This enables efficient cooling of a growing single crystal and increases the growth rate of the single crystal.

Abstract: An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

Abstract: A method of producing silicon single crystal ingot by pulling the silicon single crystal ingot made of an N-region by the CZ method, including: performing an EOSF inspection including a heat treatment to manifest oxide precipitates and selective etching on sample wafer from the silicon single crystal ingot composed of the N-region to measure a density of EOSF; performing a shallow-pit inspection to investigate a pattern of occurrence of a shallow pit; adjusting the pulling conditions according to result of identification of a defect region of the sample wafer by the EOSF and shallow-pit inspections to pull a next silicon single crystal ingot composed of the N-region, wherein in the identification of the defect region, for an N-region, what portion of an Nv-region or Ni-region the defect region corresponds to is also identified.

Abstract: An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

Abstract: A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.

Abstract: Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 ?m or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

Abstract: A method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt with a reference reflector provided at a lower end of the heat insulating member which is located above the surface of the raw material melt when a silicon single crystal is pulled up by a Czochralski method while a magnetic field is applied to the raw material melt in a crucible is disclosed.

Abstract: The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.

Abstract: A method of producing silicon single crystal ingot by pulling the silicon single crystal ingot made of an N-region by the CZ method, including: performing an EOSF inspection including a heat treatment to manifest oxide precipitates and selective etching on sample wafer from the silicon single crystal ingot composed of the N-region to measure a density of EOSF; performing a shallow-pit inspection to investigate a pattern of occurrence of a shallow pit; adjusting the pulling conditions according to result of identification of a defect region of the sample wafer by the EOSF and shallow-pit inspections to pull a next silicon single crystal ingot composed of the N-region, wherein in the identification of the defect region, for an N-region, what portion of an Nv-region or Ni-region the defect region corresponds to is also identified.

Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.

Abstract: The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 ?m or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

Abstract: A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.

Abstract: The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.

Abstract: The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient ? obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality.

Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.

Abstract: The present invention is a quartz glass crucible 5 for pulling a silicon single crystal, comprising at least an outer layer portion 23 being a translucent glass layer containing multiple bubbles in it and an inner layer portion 24 being a transparent quartz glass layer having no bubbles and a smooth surface, formed on the inner surface of the outer layer portion 23, wherein the outer layer portion 23 contains bubbles of 0.1 to 0.3 mm in diameter at the density of 1.5 to 5.0×104 bubbles/cm3. Thus, there are provided a quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible being increased in mechanical strength, making it possible to suppress deformation of a quartz glass crucible for pulling a silicon single crystal during a single crystal pulling process, thereby prevent degradation in yield rate due to dislocation in a single crystal and make the manufacture of a silicon single crystal highly efficient and a method of manufacturing the same quartz glass crucible.

Abstract: The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient ? obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality.

Abstract: The present invention provides a method for growing a carbon-doped silicon single crystal that grows a silicon single crystal from a raw material melt in a crucible having carbon added therein by the Czochralski method, wherein an extruded material or a molded material is used as a dopant for adding the carbon to a raw material in the crucible. As a result, there can be provided the method for growing a carbon-doped silicon single crystal, by which the carbon can be easily doped in the silicon single crystal at low cost and a carbon concentration in the silicon single crystal can be accurately controlled in a silicon single crystal pulling up process by the Czochralski method.

Abstract: There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member 14 and a surface of a raw material melt 4 when a silicon single crystal is pulled by a Czochralski method while a magnetic field is applied to a raw material melt 4 in a crucible, a reference reflector 18 being located at the lower end of the heat insulating member 14 which is located above the surface of the raw material melt 4, characterized in that the method includes steps of: actually measuring a distance A between the lower end surface of the heat insulating member and the surface of the raw material melt; observing a location R1 of a mirror image of the reference reflector 18 reflected on the surface of the raw material melt by a fixed-point observing apparatus 19; subsequently measuring a travel distance B of the mirror image by the fixed-point observing apparatus 19 while pulling the silicon single crystal; and calculating the distance between the lower end surface of t