Abstract: A level conversion circuit includes a level converter and a buffer gate circuit. A level converter includes two pairs of P-channel MOS transistors. A first input signal is supplied to one of the pair of P-channel MOS transistors and a second input signal is supplied to one of the other pair of P-channel MOS transistors. Each of the first and second input signals are complementary ECL-level signals. The buffer gate circuit includes two BiCMOS circuits. A first output signal from one of the pairs of P-channel MOS transistors is supplied to a gate of an N-channel MOS transistor provided in one of the BiCMOS circuits. A second output signal from the other pair of P-channel MOS transistors is supplied to a gate of an N-channel MOS transistor provided in the other BiCMOS circuit. The first input signal is supplied directly to a gate of a P-channel MOS transistor provided in one the BiCMOS circuits.

Abstract: A cermet type magnetic material whose essential components are Fe, Co and/or Ni and an oxide ceramic such as SiO, Al.sub.2 O.sub.3, SiO.sub.2, MgO or TiO.sub.2. This material features large hardness, high saturation magnetic induction, low coercive force and good durability and can readily be produced in the form of thin film on a substrate. Optionally this magnetic material may additionally comprise at least one of Si, B, P and C, or Cr and/or Mn.