Abstract: According to a nonaqueous electrolytic solution containing: (I) at least one selected from the group consisting of a compound represented by General Formula (1) described in the specification (for example, a compound represented by the following Formula (1a)) and a compound represented by General Formula (2) (for example, a compound represented by the following Formula (2a)); (II) a solute; and (III) a nonaqueous organic solvent, a nonaqueous electrolytic solution and a nonaqueous electrolytic solution battery having a low initial resistance value, and a compound that can be suitably used in the above nonaqueous electrolytic solution can be provided;

Abstract: A method of forming a silicon carbide-containing film on a substrate in a processing container. The method includes: accommodating the substrate in the processing container; adsorbing an organic compound on the substrate by supplying a carbon precursor gas to the processing container; and reacting the organic compound adsorbed on the substrate with a silicon compound by supplying a silicon precursor gas including the silicon compound to the processing container. The adsorbing the organic compound on the substrate and the reacting the organic compound are alternately repeated multiple times. In the adsorbing the organic compound, the vacuum exhaust is restricted, and then the restriction of the vacuum exhaust is released. The supply of the silicon precursor gas is stopped during the reacting the organic compound with the silicon compound, and the vacuum exhaust is not restricted after the supply of the silicon precursor gas is stopped.

Abstract: A method of forming a silicon carbide-containing film on a substrate, includes: heating the substrate; supplying a carbon precursor gas containing an organic compound having an unsaturated carbon bond to the heated substrate; supplying a silicon precursor gas containing a silicon compound to the heated substrate; laminating, on the substrate, a silicon carbide-containing layer to be turned into the silicon carbide-containing film by allowing the organic compound having the unsaturated carbon bond to thermally react with the silicon compound; and supplying plasma to the silicon carbide-containing layer.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: There is provided an etching method including: a first gas supply step of supplying a reducing gas to a workpiece having a metal film formed thereon to reduce a front surface of the metal film, the workpiece being accommodated in at least one processing chamber; and subsequently, a second gas supply step of supplying an oxidizing gas for oxidizing the metal film and an etching gas composed of a ?-diketone to etch the oxidized metal film.

Abstract: A liquid analyzer is one that performs analysis in a state of being immersed in a flowing analysis target liquid, and in order to simply make a good/bad determination and increase reliability, includes: a sensor adapted to, in a state where a responsive membrane is immersed in the flowing analysis target liquid, sense a predetermined component contained in the analysis target liquid; an analysis mechanism adapted to analyze the analysis target liquid with use of voltage generated in the sensor; and a resistance measurement mechanism adapted to, in the state where the responsive membrane is immersed in the flowing analysis target liquid, apply DC voltage to the responsive membrane to measure the resistance of the responsive membrane.

Abstract: A film forming method is provided. In the film forming method, a gas of a carbon precursor containing an organic compound having an unsaturated carbon bond is supplied to a substrate, and a gas of a silicon precursor containing a silicon compound is supplied to the substrate. Further, a carbon-silicon containing film is formed on the substrate by thermally reacting the carbon precursor with the silicon precursor at a temperature lower than 800° C.

Abstract: There is provided an etching method including: a first gas supply step of supplying a reducing gas to a workpiece having a metal film formed thereon to reduce a front surface of the metal film, the workpiece being accommodated in at least one processing chamber; and subsequently, a second gas supply step of supplying an oxidizing gas for oxidizing the metal film and an etching gas composed of a ?-diketone to etch the oxidized metal film.

Abstract: In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing ?-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.

Abstract: In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing ?-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.

Abstract: A liquid analyzer is one that performs analysis in a state of being immersed in a flowing analysis target liquid, and in order to simply make a good/bad determination and increase reliability, includes: a sensor adapted to, in a state where a responsive membrane is immersed in the flowing analysis target liquid, sense a predetermined component contained in the analysis target liquid; an analysis mechanism adapted to analyze the analysis target liquid with use of voltage generated in the sensor; and a resistance measurement mechanism adapted to, in the state where the responsive membrane is immersed in the flowing analysis target liquid, apply DC voltage to the responsive membrane to measure the resistance of the responsive membrane.

Abstract: A method of supplying a process gas comprises a step in which there is generated a process gas that is polymerizable depending on a temperature, and a step in which the thus generated process gas is supplied to a processing apparatus 4 configured to perform a predetermined process to an object to be processed W under a reduced-pressure atmosphere. When the process gas is supplied to the processing apparatus 4, a flow rate of the process gas is controlled by using a mass flow-rate control unit of a lower differential pressure type having a diaphragm 80, in which an appropriate operation range of a supply pressure is set lower than the atmospheric pressure. Thus, a supply rate (actual flow rate) of a process gas such as an HF gas that is polymerizable depending on a temperature can be precisely controlled in a stable manner.