Patents by Inventor Susumu Yamaya

Susumu Yamaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5306320
    Abstract: The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.
    Type: Grant
    Filed: December 8, 1992
    Date of Patent: April 26, 1994
    Assignee: Toshiba Tungaloy Co., Ltd.
    Inventors: Tsutomu Mashimo, Minoru Nishida, Susumu Yamaya, Hisashi Yamasaki
  • Patent number: 5201923
    Abstract: The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X-ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.
    Type: Grant
    Filed: July 25, 1991
    Date of Patent: April 13, 1993
    Assignee: Toshiba Tungaloy Co., Ltd.
    Inventors: Tsutomu Mashimo, Minoru Nishida, Susumu Yamaya, Hisashi Yamasaki
  • Patent number: 4762729
    Abstract: There are disclosed a cubic boron nitride coated material including a substrate and an outer layer composed principally of cubic boron nitride and formed on a surface of the substrate, comprising an intermediate layer fored of at least one intermediate layer and interposed between the substrate and outer layer, the intermediate between the substrate and outer layer, the intermediate layer or the outermost one of intermediate layers being formed of a layer of at least one nitrogen-containing compound selected from the nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof, and a producing method of the same which comprises: providing, on the surface of the substrate, an intermediate layer formed of at least one intermediate layer, the intermediate layer or the outermost one of intermediate layers being formed of a layer of at least one nitrogen-containing compound selected from the group consisting of nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof; and
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: August 9, 1988
    Assignee: Toshiba Tungaloy Co., Ltd.
    Inventors: Shin-ichi Hirano, Susumu Yamaya
  • Patent number: 4731303
    Abstract: A cubic boron nitride coated material comprises a substrate, an outer layer consisting essentially of cubic boron nitride and formed on a surface of the substrate, and at least one intermediate layer interposed between the substrate and outer layer, the intermediate layer comprising at least one nitrogen-containing compound selected from the nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof. Such a coated material can be produced by a method that comprises:providing, on the surface of a substrate, at least one intermediate layer comprised of at least one nitrogen-containing compound selected from the group consisting of nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof; andcausing the outer cubic boron nitride layer to undergo oriented growth on a face of the layer of the at least one nitrogen-containing compound, the face being densely packed with nitrogen atoms.
    Type: Grant
    Filed: July 16, 1986
    Date of Patent: March 15, 1988
    Assignee: Toshiba Tungaloy Co., Ltd.
    Inventors: Shin-ichi Hirano, Susumu Yamaya
  • Patent number: 4306139
    Abstract: Disclosed is a method for welding wear-resisting hard metals directly to iron base members which are slide or wear members of machinery. Hard metals comprising a tungsten carbide and a binder consisting of 15 to 30% by weight of Ni and/or Co is employed as said hard metals. A Ni alloy metal containing no Cr is used as a filler metal.
    Type: Grant
    Filed: December 26, 1979
    Date of Patent: December 15, 1981
    Assignee: Ishikawajima-Harima Jukogyo Kabushiki Kaisha
    Inventors: Yukio Shinozaki, Katsutoshi Naruse, Teruo Harada, Sadao Ohishibashi, Susumu Yamaya, Akira Fukawa