Abstract: A processing method of a workpiece includes a protective film coating step of coating a front surface of a wafer with a protective film, and partly removing the protective film along planned dividing lines, a dividing step of supplying a first gas in a plasma state to divide the wafer into multiple chips along the planned dividing lines, a hydrophilization step of supplying a second gas in a plasma state to at least any of front surfaces and side surfaces of the chips, an exposed adhesive tape, and an annular frame that have been hydrophobized due to the dividing step to hydrophilize the at least any of the front surfaces and the side surfaces of the chips, the exposed adhesive tape, and the annular frame, and a cleaning step of removing the protective film and cleaning a frame unit by a cleaning liquid after the hydrophilization step.

Abstract: A wafer processing method includes: a resin film coating step of coating an upper surface of a wafer with a water-soluble resin and coating a dicing tape exposed between the wafer and a frame with a water-soluble resin, and solidifying the water-soluble resin to form a resin film, a partial resin film removing step of removing the resin film from regions to be divided of the wafer to partially expose the upper surface of the wafer, an etching step of subjecting the regions to be divided of the wafer to plasma etching to divide the wafer into individual device chips, and a whole resin film removing step of cleaning a frame unit to remove wholly the resin film.

Abstract: There is provided a processing method of a wafer. The processing method includes a frame unit preparation step of fixing the wafer in an opening of an annular frame by an adhesion tape to prepare a frame unit and a frame unit holding step of attracting and holding the wafer of the frame unit by an chuck table in an etching chamber with the intermediary of the adhesion tape. The processing method includes also a shielding step of covering the annular frame and (or) an annular region of the adhesion tape by a cover member to shield the annular frame and (or) the annular region from an external space and a dry etching step of supplying a gas to the etching chamber and executing dry etching for the wafer after execution of the frame unit holding step and the shielding step.

Abstract: There is provided a processing method of a wafer. The processing method includes a frame unit preparation step of fixing the wafer in an opening of an annular frame by an adhesion tape to prepare a frame unit and a frame unit holding step of attracting and holding the wafer of the frame unit by an chuck table in an etching chamber with the intermediary of the adhesion tape. The processing method includes also a shielding step of covering the annular frame and (or) an annular region of the adhesion tape by a cover member to shield the annular frame and (or) the annular region from an external space and a dry etching step of supplying a gas to the etching chamber and executing dry etching for the wafer after execution of the frame unit holding step and the shielding step.

Abstract: An electrostatic chuck is provided and has a holding surface for holding a wafer with a tape attached to one side of the wafer where the tape is in contact with the holding surface. The electrostatic chuck includes a disk-shaped member having a plurality of fine holes communicating with a vacuum source, where the fine holes are exposed to the holding surface. The disk-shaped member also includes a plurality of asperities formed on the holding surface and connected to the fine holes, and an electrode embedded in the disk-shaped member. The vacuum source is operated to produce a vacuum on the holding surface through the fine holes and thereby hold the wafer through the tape on the holding surface under suction, where the asperities formed on the holding surface function as a suction passage communicating with the fine holes.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: Disclosed herein is an electrostatic chuck having a holding surface for holding a wafer with a tape attached to one side of the wafer in the condition where the tape is in contact with the holding surface. The electrostatic chuck includes a disk-shaped member having a plurality of fine holes communicating with a vacuum source, the fine holes being exposed to the holding surface, a plurality of asperities formed on the holding surface and connected to the fine holes, and an electrode embedded in the disk-shaped member. When the vacuum source is operated to produce a vacuum on the holding surface through the fine holes and thereby hold the wafer through the tape on the holding surface under suction, the asperities formed on the holding surface function as a suction passage communicating with the fine holes.

Abstract: A workpiece has a plurality of low-dielectric-constant insulation films and a metallic pattern stacked on a surface of a semiconductor substrate. Devices are formed in a plurality of regions partitioned by streets formed in a grid pattern. Surfaces of the devices formed on the workpiece are covered with a surface protective member, leaving the streets exposed. A dispersion of abrasive grains in an etching liquid capable of dissolving the metallic pattern is blasted against the workpiece together with compressed gas so as to remove the low-dielectric-constant insulation films and the metallic pattern on the streets, thereby exposing the semiconductor substrate. The workpiece is divided with the semiconductor substrate exposed by the wet blasting step subjected to dry etching so as to divide the workpiece along the streets.

Abstract: A workpiece has a plurality of low-dielectric-constant insulation films and a metallic pattern stacked on a surface of a semiconductor substrate. Devices are formed in a plurality of regions partitioned by streets formed in a grid pattern. Surfaces of the devices formed on the workpiece are covered with a surface protective member, leaving the streets exposed. A dispersion of abrasive grains in an etching liquid capable of dissolving the metallic pattern is blasted against the workpiece together with compressed gas so as to remove the low-dielectric-constant insulation films and the metallic pattern on the streets, thereby exposing the semiconductor substrate. The workpiece is divided with the semiconductor substrate exposed by the wet blasting step subjected to dry etching so as to divide the workpiece along the streets.