Patents by Inventor Su Yeol Lee
Su Yeol Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848543Abstract: The present invention relates to a power transmission underground cable winding device and a power transmission underground cable spreading system comprising same and, more specifically, to: a power transmission underground cable winding device for installing a power transmission three-phase underground cable in an underground power tunnel or conduit; and a power transmission underground cable spreading system comprising same.Type: GrantFiled: September 6, 2019Date of Patent: December 19, 2023Assignee: SN ENC CO., LTD.Inventor: Su Yeol Lee
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Patent number: 11762471Abstract: The present invention relates to a haptic feedback system and, particularly, to a device and a method for controlling an actuator for haptic feedback, the method comprising: a first step of controlling the output of an oscillator such that a clock necessary in the generation of a driving signal for driving an actuator is oscillated at a reference clock frequency; a second step of calculating the resonance frequency of the actuator from a cycle of a BEMF signal according to the driving of the actuator; and a third step of calculating a clock frequency for following the calculated resonance frequency of the actuator so as to newly change and set same to the reference clock frequency, thereby controlling the output of the oscillator.Type: GrantFiled: June 14, 2019Date of Patent: September 19, 2023Assignee: DONGWOON ANATECH CO., LTD.Inventors: Su Yeol Lee, Cheol Hoei Kim, Kyoung Rok Lee
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Publication number: 20210296865Abstract: The present invention relates to a power transmission underground cable winding device and a power transmission underground cable spreading system comprising same and, more specifically, to: a power transmission underground cable winding device for installing a power transmission three-phase underground cable in an underground power tunnel or conduit; and a power transmission underground cable spreading system comprising same.Type: ApplicationFiled: September 6, 2019Publication date: September 23, 2021Applicant: SN ENC CO., LTD.Inventor: Su Yeol LEE
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Publication number: 20210263590Abstract: The present invention relates to a haptic feedback system and, particularly, to a device and a method for controlling an actuator for haptic feedback, the method comprising: a first step of controlling the output of an oscillator such that a clock necessary in the generation of a driving signal for driving an actuator is oscillated at a reference clock frequency; a second step of calculating the resonance frequency of the actuator from a cycle of a BEMF signal according to the driving of the actuator; and a third step of calculating a clock frequency for following the calculated resonance frequency of the actuator so as to newly change and set same to the reference clock frequency, thereby controlling the output of the oscillator.Type: ApplicationFiled: June 14, 2019Publication date: August 26, 2021Applicant: DONGWOON ANATECH CO., LTD.Inventors: Su Yeol LEE, Cheol Hoei KIM, Kyoung Rok LEE
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Publication number: 20210260621Abstract: The present invention relates to a haptic feedback system and, specifically, to a device and method for controlling an actuator for haptic feedback, the method comprising: an actuator resonance frequency correction driving step of driving an actuator by repeatedly generating and outputting a drive signal including a driving time interval in which driving voltage is applied to the actuator and a guard time interval in which a back electromotive force (BEMF) signal of the actuator is detected, while correcting the length of the driving time interval according to detection time of a zero cross point of the BEMF signal detected within the guard time interval; and an actuator braking step of outputting at least one brake signal in synchronization with a zero cross point of the BEMF signal detected within the guard time interval, in order to remove residual vibration of the actuator.Type: ApplicationFiled: June 14, 2019Publication date: August 26, 2021Applicant: DONGWOON ANATECH CO., LTD.Inventors: Su Yeol LEE, Tae JIN, Tae Kyeong YOO
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Patent number: 10505073Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.Type: GrantFiled: October 5, 2017Date of Patent: December 10, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Kyu Sung, Jae Yoon Kim, Tae Hun Kim, Gam Han Yong, Dong Yeoul Lee, Su Yeol Lee
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Publication number: 20180198022Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.Type: ApplicationFiled: October 5, 2017Publication date: July 12, 2018Inventors: Young Kyu Sung, Jae Yoon Kim, Tae Hun Kim, Gam Han Yong, Dong Yeoul Lee, Su Yeol Lee
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Publication number: 20170040515Abstract: A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode.Type: ApplicationFiled: June 16, 2016Publication date: February 9, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Bock LEE, Su Yeol LEE, Dong Hyuk JOO
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Patent number: 9484500Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction.Type: GrantFiled: June 10, 2014Date of Patent: November 1, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Seok Kim, Sang Seok Lee, Su Yeol Lee, Chan Mook Lim
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Patent number: 9236304Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.Type: GrantFiled: January 8, 2014Date of Patent: January 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hun Kim, Sung Joon Kim, Su Yeol Lee, Seung Hwan Lee, Tae Sung Jang
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Patent number: 9105762Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: GrantFiled: January 28, 2015Date of Patent: August 11, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
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Patent number: 9087932Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.Type: GrantFiled: July 23, 2013Date of Patent: July 21, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hun Kim, Sung Joon Kim, Yong Il Kim, Yung Ho Ryu, Myeong Rak Son, Su Yeol Lee, Seung Hwan Lee, Tae Sung Jang, Su Min Hwangbo
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Publication number: 20150140707Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: ApplicationFiled: January 28, 2015Publication date: May 21, 2015Inventors: Jae Yoon KIM, Jin Bock LEE, Seok Min HWANG, Su Yeol LEE
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Patent number: 8969895Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: GrantFiled: September 6, 2011Date of Patent: March 3, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
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Publication number: 20140367720Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction.Type: ApplicationFiled: June 10, 2014Publication date: December 18, 2014Inventors: Ki Seok KIM, Sang Seok LEE, Su Yeol LEE, Chan Mook LIM
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Patent number: 8884318Abstract: A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.Type: GrantFiled: February 24, 2011Date of Patent: November 11, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Su Yeol Lee, Yong Tae Kim, Jin Bock Lee, Gi Bum Kim
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Patent number: 8829548Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.Type: GrantFiled: July 20, 2012Date of Patent: September 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong In Yang, Sung Tae Kim, Yong Il Kim, Su Yeol Lee, Seung Wan Chae, Hyung Duk Ko, Yung Ho Ryu
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Publication number: 20140231859Abstract: A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.Type: ApplicationFiled: August 1, 2011Publication date: August 21, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Yoon Kim, Seok Min Hwang, Su Yeol Lee, Seung Wan Chae, Jae Ho Han, Jin Bock Lee
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Publication number: 20140199796Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.Type: ApplicationFiled: January 8, 2014Publication date: July 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hun KIM, Sung Joon KIM, Su Yeol LEE, Seung Hwan LEE, Tae Sung JANG
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Patent number: D1002015Type: GrantFiled: December 28, 2021Date of Patent: October 17, 2023Assignee: HEALCERION CO., LTD.Inventors: JeongWon Ryu, Su Yeol Lee