Abstract: An integrated structure according to a preferred embodiment may include a silicon or silicon-on-insulator (SOI) substrate, a conductive layer spaced apart from the substrate and including a metal or a metal compound, and a diffusion barrier layer provided therebetween. The substrate and the diffusion barrier layer may directly contact and form a van der Waals junction. Since the diffusion barrier layer may block diffusion of metal atoms into the substrate lattice by blocking movement of materials (atoms) between the substrate and the conductive layer and may also control injection of holes from the conductive layer toward the substrate, defects at the metal-semiconductor interface may be controlled to overcome the limitations of ultra-fine and highly integrated semiconductors.

Abstract: The present disclosure is completed by confirming the differentiation into Th17 and its activity-increasing function and the differentiation into Treg and its activity-suppressing function in compounds isolated from Pseudolysimachion nakaianum (Ohwi) T. Yamaz. The composition of the present disclosure increases the immune response by simultaneously regulating Th17 and Treg cell groups and their activities, and thus may be applied for the prevention and treatment of cancer and infectious diseases. According to the present disclosure, there is an advantage of having very few or no side effects by using Pseudolysimachion nakaianum (Ohwi) T. Yamaz, a natural product with safety that has been verified for a long time. Therefore, the present disclosure is expected to be used in various fields such as drugs, quasi-drugs, cosmetic materials, functional biomaterials, and functional food materials for immunity reinforcement and improvement, prevention, or treatment of infectious diseases and tumors.

Abstract: A semiconductor device, including a substrate; a first conductive type well and a second conductive type body region at an upper portion of the substrate; a field plate on the first conductive type well, the field plate including a semiconductor material or an insulative nitride; and a gate electrode extending in a lateral direction on the substrate from a lateral portion of the second conductive type body region to a lateral portion of the first conductive type well, the gate electrode overlapping the field plate.

Abstract: An image display device and an operation method thereof are provided. An object may be displayed on a display. A display characteristic of the object may be changed when no input for the object is received for a predetermined period of time.

Abstract: Provided is an image display device. The image display device includes an interface, a memory, a controller, and a display unit. The interface supports communication with an external storage medium, and the memory stores data transmitted through the interface. The controller compares attribute information of data stored in the memory with that of data stored in the external storage medium when the external storage medium is connected through the interface and controls changing of a data name of data stored in the memory or a data name of data stored in the external storage medium depending on whether the attribute information is identical. The display unit displays whether a data name is changed in response to a control signal from the controller.

Abstract: A process for preparing a black matrix comprising the steps of producing a developed substrate by coating, drying, exposing and developing a photoresist on the inside of a substrate, producing a dried substrate by drying the developed substrate several times, coating a dye on the dried substrate and then drying the board, coating graphite on the dried substrate, and etching the graphite-coated substrate. This method makes it possible to perfectly etch the black matrix dot and increase volatility in fluorescent coating.