Abstract: A method of imaging a semiconductor device includes forming an X-ray source layer on a first surface of a semiconductor substrate, mounting the semiconductor substrate in a semiconductor device imaging apparatus, the semiconductor device imaging apparatus including an electron-beam feeder and an X-ray detector, irradiating electron-beams on the X-ray source layer of the semiconductor substrate using the electron-beam feeder, and measuring X-rays emitted from the X-ray source layer and having passed through the semiconductor substrate using the X-ray detector.

Abstract: A method of inspecting a semiconductor device includes obtaining a brightness of a scanning electron microscope (SEM) image according to an intensity of a current incident on a normal target, selecting an optimal current range for inspecting a target, based on the brightness of the SEM image according to the intensity of the current, and inspecting the target, based on a current having the optimal current range, wherein the selecting of the optimal current range for inspecting the target includes dividing the brightness of the SEM image according to the intensity of the current into a first area, a second area and a third area, based on the intensity of the current incident on the target.

Abstract: Provided is a pattern inspection system, including a scanning electron microscope (SEM) including an electron gun configured to generate a first electron beam and emit the generated first electron beam toward a first wafer, a detector configured to detect electrons emitted from the first wafer based on the first electron beam emitted toward the first wafer, and at least one processor configured to generate a first SEM image including a plurality of pixels based on the detected electrons, and determine, based on a period of a pattern extracted from the first SEM image, a pixel size of a second SEM image to be generated by the SEM with respect to a second wafer.

Abstract: A semiconductor device inspection method includes: selecting, for a semiconductor device including at least one layer, a target layer on which inspection and measurement are to be performed; selecting a material to fill a hole region formed inside the semiconductor device; conducting a simulation for an optical inspection and a measurement for the semiconductor device; selecting, based on the simulation, a wavelength band of light for the optical inspection and the measurement; and detecting, through the light at the selected wavelength, a lower portion of the semiconductor device and a defect of the semiconductor device. A refractive index of the material filling the inside of the hole region is greater than a refractive index of a molding layer surrounding the outside of the hole region.

Abstract: Provided are a process for preparing (3R,4R)-1-benzyl-N,4-dimethylpiperidin-3-amine or a salt thereof, which is an intermediate useful for the preparation of tofacitinib, an intermediate used in the process, i.e., isopropanol solvate of methyl ((3R,4R)-1-benzyl-4-methylpiperidin-3-yl)carbamate dibenzoyl-L-tartrate, an intermediate, having excellent stability, useful for the preparation of tofacitinib, i.e., (3R,4R)-1-benzyl-N,4-dimethylpiperidin-3-amine acetate, and a process for preparing tofacitinib or a pharmaceutically acceptable salt thereof.

Abstract: An image processing method includes generating a full image of an area of interest in which unit patterns are repeatedly arranged, blurring each of the unit patterns, calculating respective center positions of each of the unit patterns based on the blurring, setting respective reference positions on each of the unit patterns based on the center positions, cropping the full image into a plurality of unit images, and merging the plurality of unit images based on the reference positions to generate an averaged image.

Abstract: An electronic device includes first and second image sensors, an image signal processor, and a main processor. The first and second image sensors photograph an object in first and second FOVs to generate first and second signals, respectively. The image signal processor generates first image data based on the first signal, generates second image data based on the second signal, and generates cropped image data based on cropping ROI from the second image data. The main processor generates a first video stream based on the first image data, generates a second video stream based on the cropped image data, and outputs the first video stream to a display device. The main processor stops outputting the first video stream to the display device and initiates outputting the second video stream to the display device in response to receiving a user input command.

Abstract: An electronic device includes first and second image sensors, an image signal processor, and a main processor. The first and second image sensors photograph an object in first and second FOVs to generate first and second signals, respectively. The image signal processor generates first image data based on the first signal, generates second image data based on the second signal, and generates cropped image data based on cropping ROI from the second image data. The main processor generates a first video stream based on the first image data, generates a second video stream based on the cropped image data, and outputs the first video stream to a display device. The main processor stops outputting the first video stream to the display device and initiates outputting the second video stream to the display device in response to receiving a user input command.

Abstract: Provided are a novel process for preparing (3R,4R)-1-benzyl-N,4-dimethylpiperidin-3-amine or a salt thereof, which is an intermediate useful for the preparation of tofacitinib, an intermediate used in the process, i.e., isopropanol solvate of methyl ((3R,4R)-1-benzyl-4-methylpiperidin-3-yl)carbamate dibenzoyl-L-tartrate, an intermediate, having excellent stability, useful for the preparation of tofacitinib, i.e., (3R,4R)-1-benzyl-N,4-dimethylpiperidin-3-amine acetate, and a process for preparing tofacitinib or a pharmaceutically acceptable salt thereof.

Abstract: An electronic device performs HDR processing by using a plurality of image sensor blocks including a first image sensor block that photographs an object at a first field of view and a second image sensor block that photographs the object at a second field of view greater than the first field of view. An image signal processor generates first image data and second image data based on the photographed object. A main processor crops image data among image data of the second sensor that correspond to image data of the first sensor, and performs HDR processing based on the first image data and the cropped second image data.

Abstract: An electronic device performs HDR processing by using a plurality of image sensor blocks including a first image sensor block that photographs an object at a first field of view and a second image sensor block that photographs the object at a second field of view greater than the first field of view. An image signal processor generates first image data and second image data based on the photographed object. A main processor crops image data among image data of the second sensor that correspond to image data of the first sensor, and performs HDR processing based on the first image data and the cropped second image data.

Abstract: An image sensor module is provided. The image sensor module includes a printed circuit board (PCB), an image sensor chip disposed on a first plane of the PCB and electrically connected to the PCB, and an image signal processing chip disposed on the first plane of the PCB and electrically connected to the PCB. An aspect ratio of the image signal processing chip is at least two times greater than an aspect ratio of the image sensor chip. A minimum feature size of a metal line implemented in the image sensor chip is at least 1.5 times greater than a minimum feature size of a metal line implemented in the image signal processing chip.

Abstract: An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Abstract: An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Abstract: A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.

Abstract: Reflective photomask blanks are provided. The reflective photomask blank includes a multi-layered reflection layer on a photomask substrate, a capping layer directly disposed on a top surface of the multi-layered reflection layer to include transition metal and silicon, a passivation layer disposed on a surface of the capping layer opposite to the multi-layered reflection layer, and a light absorption layer on the passivation layer.

Abstract: An image sensor module is provided. The image sensor module includes a printed circuit board (PCB), an image sensor chip disposed on a first plane of the PCB and electrically connected to the PCB, and an image signal processing chip disposed on the first plane of the PCB and electrically connected to the PCB. An aspect ratio of the image signal processing chip is at least two times greater than an aspect ratio of the image sensor chip. A minimum feature size of a metal line implemented in the image sensor chip is at least 1.5 times greater than a minimum feature size of a metal line implemented in the image signal processing chip.

Abstract: The present invention relates to an optical plate for lighting capable of improving the brightness of light emitted from a light source and adjusting a viewing angle to alleviate side glare phenomenon. The present invention also relates to a lighting. The purpose of the present invention is to provide a structure in which a light-diffusing member and an optical viewing angle adjusting member can independently function; an integrated optical plate for lighting, wherein the thickness of the optical plate for lighting is reduced by the lamination of a light-diffusing member, a transmission layer, and an optical viewing angle adjusting member; a lighting apparatus using thereof.

Abstract: A detachable X-ray generating device proposed in the present invention comprises: an X-ray generating unit including an X-ray generating tube for irradiating an X-ray and a first connecting portion connected to the X-ray generating tube through an electric wire; and a high voltage generating unit for receiving an external supply voltage to generate a predetermined high voltage and including a second connection portion through which the generated high voltage is output, wherein the high voltage is supplied to the X-ray generating tube by mutually coupling the first connecting portion and the second connecting portion. An apparatus for removing static electricity according to the present invention has effects of replacement costs reduction, ease of selection of an installation location, thermal insulation, etc. since the apparatus can be mutually separated.