Abstract: An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by carrier desertion.

Abstract: An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by means of carrier desertion.

Abstract: The invention relates to a power threshold optoelectronic switch and its control process. Under the action of a pulse-type light beam, as from a given power threshold, said switch makes it possible to establish a short-circuit between first and second electrodes spaced so as to form an interelectrode gap. The switch comprises means for applying a supply voltage to the first electrode, a semiconducting guiding layer placed on an insulating substrate, whereby the electrodes are placed on said layer and an optical diffraction grating etched in the guiding layer in the interelectrode gap. The nature and thickness of the guiding layer and the spacing of the grating, as well as the angle of incidence of the beam are chosen so as to obtain, during the passage of power of the light beam through the power threshold, the rapid passage from a very weak coupling state of the incident light in the guiding layer to a resonant coupling making it possible to produce the short-circuit.