Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.

Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blend type structure; and forming a Zinc-blend type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.

Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blende-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.

Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blende type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a Zinc-blende type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.

Abstract: The present invention provides a method for manufacturing a compound semiconductor, which can improve a quality of each of thin film layers constituting a laminate structure. Each of first and second thin film layers is formed by growing a crystal of each thin film layer one over another on a silicon substrate 2 in first and second vapor deposition chambers 6a and 6b for exclusive use, corresponding to the respective thin film layers. As this crystal growth is carried out under conditions under which nothing other than raw gas materials used therein or those derived therefrom, such as stuck materials, precipitates, etc., exists in the first and second vapor deposition chambers 6a and 6b, a decrease in quality of the second thin film layer can be prevented because an unexpected reaction between the raw gas materials used for the first and second thin film layers, etc. can be suppressed.

Abstract: A short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. Fluoride crystals are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small. In a crucible, whose cavity is filled with raw material powder, heated in a vertical Bridgman furnace to produce fluoride crystals, a crucible is the one in which the shortest diameter of a section of the cavity is small.

Abstract: In the present invention, a short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. According to the present invention, it is possible to obtain a reliable light-emitting element device. Fluoride crystals of the present invention are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small.

Abstract: A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200° C. and not higher than 700° C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750° C. and not higher than 1200° C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula AlpGaqInrN (where 0≦p≦1, 0≦q≦1, 0≦r≦1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.

Abstract: A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750.degree. C. and not higher than 1200.degree. C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al.sub.p Ga.sub.q In.sub.r N (where 0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.