Abstract: There is provided a substrate processing method which, even when a material having a low mechanical strength is employed as an interlayer dielectric, can produce a semiconductor device having a multi-layer interconnect structure of fine interconnects in higher yield. A substrate processing method according to the present invention includes steps of: providing a substrate having interconnect recesses formed in a surface; forming a metal film on the surface of the substrate by plating to embed the metal film in the interconnect recesses; removing the metal film formed in an ineffective region of the substrate and an extra metal film formed in an effective region of the substrate; and flattening the surface of the substrate after removal of the metal film by performing chemical-mechanical polishing.

Abstract: There is provided a substrate processing method which, even when a material having a low mechanical strength is employed as an interlayer dielectric, can produce a semiconductor device having a multi-layer interconnect structure of fine interconnects in higher yield. A substrate processing method according to the present invention includes the steps of: providing a substrate having interconnect recesses formed in a surface; forming a metal film on the surface of the substrate by plating to embed the metal film in the interconnect recesses; removing the metal film formed in an ineffective region of the substrate and an extra metal film formed in an effective region of the substrate; and flattening the surface of the substrate after the removal of the metal film by chemical-mechanical polishing.