Abstract: A laser processing system includes a laser beam source that produces a raw laser beam; a beam expansion system that receives the raw laser beam and produces an expanded laser beam; a homogenization system that receives the expanded laser beam and produces a laser beam that is homogenized and has a line-shaped beam cross section in the processing plane, wherein the homogenization system includes a first homogenization arrangement that homogenizes along the short axis and a second homogenization arrangement for homogenization along the long axis, each of the homogenization arrangements includes optical elements that split the laser beam into a multiplicity of partial beams and a condenser system that superposes the partial beams in a superposition plane, and the first homogenization arrangement includes a first condenser system with at least one first mirror and the second homogenization arrangement includes a second condenser system with at least one second mirror.

Abstract: A laser processing system includes a laser beam source that produces a raw laser beam; a beam expansion system that receives the raw laser beam and produces an expanded laser beam; a homogenization system that receives the expanded laser beam and produces a laser beam that is homogenized and has a line-shaped beam cross section in the processing plane, wherein the homogenization system includes a first homogenization arrangement that homogenizes along the short axis and a second homogenization arrangement for homogenization along the long axis, each of the homogenization arrangements includes optical elements that split the laser beam into a multiplicity of partial beams and a condenser system that superposes the partial beams in a superposition plane, and the first homogenization arrangement includes a first condenser system with at least one first mirror and the second homogenization arrangement includes a second condenser system with at least one second mirror.

Abstract: A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

Abstract: A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

Abstract: A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

Abstract: A laser processing system includes a laser beam source that produces a raw laser beam; a beam expansion system that receives the raw laser beam and produces an expanded laser beam; a homogenization system that receives the expanded laser beam and produces a laser beam that is homogenized and has a line-shaped beam cross section in the processing plane, wherein the homogenization system includes a first homogenization arrangement that homogenizes along the short axis and a second homogenization arrangement for homogenization along the long axis, each of the homogenization arrangements includes optical elements that split the laser beam into a multiplicity of partial beams and a condenser system that superposes the partial beams in a superposition plane, and the first homogenization arrangement includes a first condenser system with at least one first mirror and the second homogenization arrangement includes a second condenser system with at least one second mirror.

Abstract: A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

Abstract: In a method for producing a permanent mark in an optical element which consists essentially of a material that is transparent in the visible spectral region, a marking region of the optical element is irradiated with laser radiation in order to generate local, near-surface material changes in such a way that a mark of prescribed shape and size is generated. The laser radiation has an operating wavelength ? from the wavelength region between 1.1 ?m and 9.2 ?m. A thulium-doped fiber laser is preferably used as laser radiation source. The operating wavelength is selected in dependence from the material of the optical element such that the material exhibits a partial absorption with a transmittance between 60% and 98%. The method can be used, in particular, to provide spectacle lenses, contact lenses or intraocular lenses with marks.

Abstract: In a method for producing a permanent mark in an optical element which consists essentially of a material that is transparent in the visible spectral region, a marking region of the optical element is irradiated with laser radiation in order to generate local, near-surface material changes in such a way that a mark of prescribed shape and size is generated. The laser radiation has an operating wavelength ? from the wavelength region between 1.1 ?m and 9.2 ?m. A thulium-doped fibre laser is preferably used as laser radiation source. The operating wavelength is selected in dependence from the material of the optical element such that the material exhibits a partial absorption with a transmittance between 60% and 98%. The method can be used, in particular, to provide spectacle lenses, contact lenses or intraocular lenses with marks.