Abstract: The invention relates to a device and a method for UV antisepsis, in particular for intracorporeal in vivo UV antisepsis on the human and animal body in the event of colonization with multiresistant pathogens (MRPs) such as methicillin-resistant Staphylococcus aureus (MRSA) and Staphylococcus epidermidis (MRSE). The device comprises a light emitting diode chip, LED chip, configured to emit radiation in the UVC spectral range, wherein the LED chip forms a light emitting diode, LED, with a package; a spectral filter element set up to limit the radiation emitted by the LED chip substantially to wavelengths below 235 nm; and an optical element for directional emission of the radiation emitted by the LED.

Abstract: A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and has the steps of: applying a metal layer (20) of palladium onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring the palladium of the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20?) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.

Abstract: The invention relates to a method for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and comprises the steps of: applying a metal layer (20) onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring at least the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are produced on the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20?) after the structuring. The method is characterized by a conductive hard mask. Since the mask is conductive, it can remain embedded in the metal. It is not necessary to remove the deposits. The deposits and the mask form a part of the contact.

Abstract: The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer.

Abstract: The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer.