Patents by Inventor Sven Gustav Lanzerstorfer

Sven Gustav Lanzerstorfer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a copper element and method of forming a semiconductor device having a copper element
    Patent number: 10446469
    Abstract: A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: October 15, 2019
    Assignee: Infineon Technologies AG
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert
  • Semiconductor Device Having a Copper Element and Method of Forming a Semiconductor Device Having a Copper Element
    Publication number: 20160329263
    Abstract: A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.
    Type: Application
    Filed: July 22, 2016
    Publication date: November 10, 2016
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert
  • Integrated circuit and method of forming an integrated circuit
    Patent number: 9418937
    Abstract: An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 ?m and a ratio of average grain size to thickness of less than 0.7.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: August 16, 2016
    Assignee: Infineon Technologies AG
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert
  • Integrated circuit including power transistor cells and a connecting line
    Patent number: 8502274
    Abstract: Power transistor cells are formed in a cell array of an integrated circuit. Contact vias may electrically connect a metal structure above the cell array and the power transistor cells. A connecting line electrically connects a first element arranged in the cell array and a second element arranged in a peripheral region. A portion of the connecting line is arranged between the metal structure and the cell array and runs between a first axis and a second axis which are arranged parallel and at a distance to each other. The distance is greater than a width of the connecting line portion. The connecting line portion is tangent to both the first axis and the second axis. Shear-induced material transport along the connecting line is reduced by shortening critical portions or by exploiting grain boundary effects. The reliability of an insulator structure covering the connecting line is increased.
    Type: Grant
    Filed: April 6, 2012
    Date of Patent: August 6, 2013
    Assignee: Infineon Technologies AG
    Inventors: Kurt Matoy, Thomas Detzel, Michael Nelhiebel, Arno Zechmann, Stefan Decker, Robert Illing, Sven Gustav Lanzerstorfer, Christian Djelassi, Bernhard Auer, Stefan Woehlert
  • Integrated Circuit and Method of Forming an Integrated Circuit
    Publication number: 20130147047
    Abstract: An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 ?m and a ratio of average grain size to thickness of less than 0.7.
    Type: Application
    Filed: December 9, 2011
    Publication date: June 13, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert