Abstract: A method and formulation for fabricating a transparent force sensing (TFS) layer is provided. The TFS layer is fabricated by preparing a formulation for a transparent polymer-conductor composite (TPCC). The TPCC formulation comprises transparent conducting oxide (TCO) nanoparticles, a first solvent for forming a dispersion of the TCO nanoparticles and having an intermediate boiling point ranging from one hundred and twenty five (125) to one hundred and ninety nine (199) degrees centigrade, at least one additive to prevent agglomeration of the TCO nanoparticles, a second solvent for facilitating dissolving of the at least one additive, a third solvent having a high boiling point above one hundred and ninety nine (199) degrees centigrade and a transparent polymer dissolved in the first and third solvents. The TPCC formulation is disposed on a substrate forming a wet film and dried to form a dry film.

Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Abstract: Surface-modified agglomerate of indium tin oxohydrate with a proportion of indium of 80 to 98.9% by weight, of tin of 2 to 20% by weight and of carbon of 0.01 to 1% by weight. Process for preparing a surface-modified agglomerate of indium tin oxide, in which the surface-modified agglomerate of indium tin oxohydrate is dried under air at temperatures of more than 150° C. and less than 310° C., and is then calcined under reducing conditions. Surface-modified agglomerate of indium tin oxide obtainable by this process. Process for preparing a surface-modified powder of indium tin oxide and a dispersion thereof, in which the surface-modified agglomerate and one or more solvents are combined to give a mixture, the mixture is converted to a dispersion by means of a dispersing unit and liquid constituents are optionally removed from the dispersion in order to obtain a powder.

Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Abstract: Zinc silicon oxide particles with a core-shell structure which have a Zn/Si ratio of from 2 to 75, in atom %/atom %, whose fraction of Zn, Si and O is at least 99% by weight, based on the zinc silicon oxide particles, which have a BET surface area of from 10 to 60 m2/g, a weight-averaged primary particle diameter of from 10 to 75 nm an average aggregate area of less than 40 000 nm2 and an average aggregate diameter (ECD) of less than 200 nm, whose core is crystalline and consists of aggregated primary particles of zinc oxide and whose shell surrounds the aggregated zinc oxide primary particles and consists of one or more compounds containing the elements Si and O. Dispersion, coating composition and sunscreen formulation comprise the zinc silicon oxide particles.

Abstract: Indium-tin mixed oxide powder which consists of primary particle aggregates and contains 50 to 90% by weight indium oxide, calculated as In2O3, and 10 to 50% by weight tin oxide, calculated as SnO2. It is produced by atomising a solution of an inorganic indium compound and an organic tin compound and burning it in a flame. It may be used for the production of electrically conductive paints and coatings, solar cells and IR and UV absorbers and in medical technology.

Abstract: A paste is provided having as solid phase at least one nanoscale powder and as liquid phase at least one dispersant, wherein the fraction of the nanoscale powder is 30% to 95% by weight and the fraction of the liquid phase is at least 5% by weight, based in each case on the total amount of the paste, the paste has a water content of less than 3% by weight of water and the liquid phase has a VOC content of less than 10 g/l, and the use of the paste in preparing dispersions, the dispersions prepared thereby, and use in a variety of other enduses.