Abstract: A system includes at least two power semiconductor chips being connected in parallel and including each a gate terminal for switching the power semiconductor chip in a blocking-state by a first gate voltage and for switching the power semiconductor chip in a conducting-state by a second gate voltage. The system includes further a control device adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips. The control device is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip when a power semiconductor chip fails, and that the third gate voltage is higher than the second gate voltage.

Abstract: A system includes at least two power semiconductor chips being connected in parallel and including each a gate terminal for switching the power semiconductor chip in a blocking-state by a first gate voltage and for switching the power semiconductor chip in a conducting-state by a second gate voltage. The system includes further a control device adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips. The control device is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip when a power semiconductor chip fails, and that the third gate voltage is higher than the second gate voltage.

Abstract: A semiconductor component including a housing for a semiconductor substrate, an anode, a cathode, an annular gate electrode flange, which laterally protrudes from the housing and concentrically surrounds the housing, and an annular auxiliary cathode flange, which protrudes from the housing and makes contact with the cathode.

Abstract: The present invention discloses a power semiconductor component 1 having a special pressure contact system which is suitable, for example, for circuit-breakers, rectifiers, or the like in industrial drives. A pressure-equalizing element 9 in the form of a box 10, 15 with a flowable or plastically deformable medium 12 is inserted between a pressure plunger 7a and a power semiconductor 2. Because of the hydrostatic pressure in the box 10, an inhomogeneous pressure delivered at one side is passed on to the other side as a homogeneous pressure. A homogeneous pressure delivery can be achieved, even in the edge region of the pressure surfaces 11a, 11b, by means of an inlet camber of the lateral surface 13. The box 10, 15 preferably consists of copper or AlSiC, and the medium 12 of a liquid metal (Ga, Hg), a plastic metal (Pb, Al) or of metal balls (Cu) in silicone oil.

Abstract: A two-stage method is proposed for producing a highly transparent anode emitter (2) in a GTO (1). In a first step, an anode emitter (2) is indiffused whose thickness is greater than 0.5 .mu.m and whose doping concentration is greater than 10.sup.17 cm.sup.-3. In a second step, the emitter efficiency of the anode emitter (2) is subsequently reduced to a desired degree by local carrier life setting.