Patents by Inventor Sven Muehle

Sven Muehle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing an optical element from glass
    Patent number: 12234174
    Abstract: The present disclosure provides an improved production method for optical elements. In this case, it is desirable to achieve high contour accuracy and/or surface quality for optical elements or lenses or headlight lens. In addition, it is desirable to reduce the costs of a production process for objective lenses and/or headlights, microprojectors or vehicle headlights.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: February 25, 2025
    Assignee: DOCTER OPTICS SE
    Inventors: Alexander Kuppe, Ralf Polle, Thomas Walther, Peter Mühle, Christoph Dittmann, Stephan Jirak, Hagen Goldammer, Annegret Diatta, Sven Fröhlich
  • Nitrogen-free ARC layer and a method of manufacturing the same
    Patent number: 7326646
    Abstract: The present invention provides a nitrogen-free ARC layer, which is formed on the basis of silane and carbon dioxide by PECVD in a nitrogen-free deposition atmosphere. The optical characteristics may be tuned in a wide range, wherein, in particular, a back reflection into the resist is maintained at 3% or less. The ARC layer is well suited for 193 nm lithography.
    Type: Grant
    Filed: January 13, 2005
    Date of Patent: February 5, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Hartmut Ruelke, Katja Huy, Sven Muehle
  • Nitrogen-free ARC/capping layer and method of manufacturing the same
    Patent number: 7314824
    Abstract: The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover, the ARC/capping layer is directly formed on the low-k material, thereby also preserving the integrity thereof during an etch and chemical mechanical polishing process.
    Type: Grant
    Filed: April 22, 2005
    Date of Patent: January 1, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Kai Frohberg, Sven Muehle, Hartmut Ruelke
  • Nitrogen-free ARC/capping layer and method of manufacturing the same
    Publication number: 20060024955
    Abstract: The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover, the ARC/capping layer is directly formed on the low-k material, thereby also preserving the integrity thereof during an etch and chemical mechanical polishing process.
    Type: Application
    Filed: April 22, 2005
    Publication date: February 2, 2006
    Inventors: Kai Frohberg, Sven Muehle, Hartmut Ruelke
  • Nitrogen-free ARC layer and a method of manufacturing the same
    Publication number: 20050208755
    Abstract: The present invention provides a nitrogen-free ARC layer, which is formed on the basis of silane and carbon dioxide by PECVD in a nitrogen-free deposition atmosphere. The optical characteristics may be tuned in a wide range, wherein, in particular, a back reflection into the resist is maintained at 3% or less. The ARC layer is well suited for 193 nm lithography.
    Type: Application
    Filed: January 13, 2005
    Publication date: September 22, 2005
    Inventors: Hartmut Ruelke, Katja Huy, Sven Muehle