Abstract: The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.

Abstract: This specification discloses a VCSEL (Vertical-Cavity Surface-Emitting Laser) device with single-mode output and optionally single polarization output. This device is given by lateral mode confinement by the PBG (Photonic Band-Gap) effect by shallow etching in a partial VCSEL top mirror. The PBG area encircles a MS-region (Mode-Shaping region), which is characterized by large longitudinal mode losses. The MS-region encircles the LA-region (Light Aperture region), which is characterised by low longitudinal mode losses. The MS-region does not contribute to the lateral mode-confinement to the LA-aperture, and the lateral modes confined by the PBG area. The VCSEL is thus optimized for single fundamental mode operation.

Abstract: The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.

Abstract: This specification discloses a VCSEL (Vertical-Cavity Surface-Emitting Laser) device with single-mode output and optionally single polarization output. This device is given by lateral mode confinement by the PBG (Photonic Band-Gap) effect by shallow etching in a partial VCSEL top mirror. The PBG area encircles a MS-region (Mode-Shaping region), which is characterized by large longitudinal mode losses. The MS-region encircles the LA-region (Light Aperture region), which is characterised by low longitudinal mode losses. The MS-region does not contribute to the lateral mode-confinement to the LA-aperture, and the lateral modes confined by the PBG area. The VCSEL is thus optimized for single fundamental mode operation.

Abstract: The present invention relates to a method and a device for modulating optical signals based on modulating bending losses in bend, quantum well semiconductor waveguide sections. The complex refractive index of the optical active semiconducting components of the waveguide section is modulated by applying a variable electric or electromagnetic field. The modulation of the complex refractive index results in a modulation of the refractive index contrast and the absorption coefficient for the waveguide at the frequency of the light. By carefully adjusting the composition of the semiconducting components and the applied electric field in relation to the frequency of the modulated radiation, the bending losses (and possibly coupling losses) will provide extinction of light guided by the bent waveguide section. The refractive index contrast may be modulated while keeping the absorption coefficient substantially constant and small, whereby the guided light can be modulated only by bending losses.

Abstract: The present invention relates to a method and a device for modulating optical signals based on modulating bending losses in bend, quantum well semiconductor waveguide sections. The complex refractive index of the optical active semiconducting components of the waveguide section is modulated by applying a variable electric or electromagnetic field. The modulation of the complex refractive index results in a modulation of the refractive index contrast and the absorption coefficient for the waveguide at the frequency of the light. By carefully adjusting the composition of the semiconducting components and the applied electric field in relation to the frequency of the modulated radiation, the bending losses (and possibly coupling losses) will provide extinction of light guided by the bent waveguide section. The refractive index contrast may be modulated while keeping the absorption coefficient substantially constant and small, whereby the guided light can be modulated only by bending losses.

Abstract: The present invention relates to a method and a device for modulating optical signals based on modulating bending losses in bend, quantum well semiconductor waveguide sections. The complex refractive index of the optical active semiconducting components of the waveguide section is modulated by applying a variable electric or electromagnetic field. The modulation of the complex refractive index results in a modulation of the refractive index contrast and the absorption coefficient for the waveguide at the frequency of the light. By carefully adjusting the composition of the semiconducting components and the applied electric field in relation to the frequency of the modulated radiation, the bending losses (and possibly coupling losses) will provide extinction of light guided by the bent waveguide section. The refractive index contrast may be modulated while keeping the absorption coefficient substantially constant and small, whereby the guided light can be modulated only by bending losses.