Abstract: A self-mixing interferometric, SMI, laser sensor comprises a vertical cavity surface emitting laser, VCSEL, configured to emit laser radiation, the VCSEL comprising a first distributed Bragg reflector, DBR, a second DBR and a cavity region including an active light generation region, wherein the cavity region is arranged in a layer structure between a front side of the first DBR and a back side of the second DBR. Therein at least one of the first and second DBR comprises a first contrast region and a second contrast region, the first contrast region having a first refractive index contrast ?n1 regarding an emission wavelength of the VCSEL and the second contrast region having a second refractive index contrast ?n2/n larger than the first refractive index contrast ?n1/n.

Abstract: An optoelectronic semiconductor device (1) comprising a semiconductor body (10) having a first region (101), a second region (102) and an active region (103) configured to emit or detect electromagnetic radiation in an emission direction (S) is described herein. The optoelectronic semiconductor device (1) further comprises a first reflector (21) arranged on a first side of the semiconductor body (10) and a second reflector (22) arranged on a second side of the semiconductor body (10), opposite the first side, a first electrode (31) and a second electrode (32), an aperture region (104) and an optical element (40) arranged downstream of the active region (103) in the emission direction (S). The emission direction (S) is oriented parallel to a stacking direction of the semiconductor body (10). The first electrode (31) is arranged on the first region (101) and the second electrode (32) is arranged between the second reflector (22) and the active region (103).

Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes providing a cavity structure comprising a seed area with a seed material. The method further includes growing, within the cavity structure, a quantum dot structure in a first growth direction from a seed surface of the seed material and growing, in the first growth direction, a first embedding layer on a first surface of the quantum dot structure. The method further includes removing the seed material and growing, within the cavity structure, on a second surface of the quantum dot structure, a second embedding layer in a second growth direction. The second surface of the quantum dot structure is different from the first surface of the quantum dot structure and the second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes providing a cavity structure comprising a seed area with a seed material. The method further includes growing, within the cavity structure, a quantum dot structure in a first growth direction from a seed surface of the seed material and growing, in the first growth direction, a first embedding layer on a first surface of the quantum dot structure. The method further includes removing the seed material and growing, within the cavity structure, on a second surface of the quantum dot structure, a second embedding layer in a second growth direction. The second surface of the quantum dot structure is different from the first surface of the quantum dot structure and the second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: Embodiments of the invention relate to a plasmonic laser including a substrate and a coaxial plasmonic cavity formed on the substrate and adapted to facilitate a plasmonic mode. The plasmonic laser further includes an electrical pumping circuit configured to electrically pump the plasmonic laser. The coaxial plasmonic cavity includes a peripheral plasmonic ring structure, a central plasmonic core and a gain structure arranged between the peripheral plasmonic ring structure and the central plasmonic core. The gain structure includes one or more ring-shaped quantum wells as gain material. The one or more ring-shaped quantum wells have a surface that is aligned orthogonal to a surface of the substrate. The electrical pumping circuit is configured to pump the plasmonic laser via the peripheral plasmonic ring structure and the central plasmonic core.

Abstract: A cavity structure comprises one or more seed surfaces, a first growth path for the growth of a first semiconductor structure from one of the one or more seed surfaces and a second growth path for the growth of a second semiconductor structure from one of the one or more seed surfaces. The cavity structure further comprises at least one opening for supplying precursor materials to the cavity structure. A method can include selectively growing the first semiconductor structure along the first growth path and selectively growing the second semiconductor structure along the second growth path. The first semiconductor structure has a first growth front and the second semiconductor structure has a second growth front. The method can further include merging the first and the second growth front at a border area of the first and the second semiconductor structure.

Abstract: A method for fabricating an ellipsoidal or semi-ellipsoidal semiconductor structure includes steps of providing a semiconductor substrate and fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate. The cavity structure encompasses a seed surface of the semiconductor substrate. The method includes a further step of growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate. Fabricating the cavity structure includes arranging a droplet comprising a sacrificial material on the semiconductor substrate, forming a layer of a coating material on the semiconductor substrate and the droplet, and selectively removing the sacrificial material of the droplet to expose the cavity structure.

Abstract: A method for fabricating an ellipsoidal or semi-ellipsoidal semiconductor structure includes steps of providing a semiconductor substrate and fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate. The cavity structure encompasses a seed surface of the semiconductor substrate. The method includes a further step of growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate. Fabricating the cavity structure includes arranging a droplet comprising a sacrificial material on the semiconductor substrate, forming a layer of a coating material on the semiconductor substrate and the droplet, and selectively removing the sacrificial material of the droplet to expose the cavity structure.

Abstract: A cavity structure comprises one or more seed surfaces, a first growth path for the growth of a first semiconductor structure from one of the one or more seed surfaces and a second growth path for the growth of a second semiconductor structure from one of the one or more seed surfaces. The cavity structure further comprises at least one opening for supplying precursor materials to the cavity structure. A method can include selectively growing the first semiconductor structure along the first growth path and selectively growing the second semiconductor structure along the second growth path. The first semiconductor structure has a first growth front and the second semiconductor structure has a second growth front. The method can further include merging the first and the second growth front at a border area of the first and the second semiconductor structure.

Abstract: Embodiments of the invention relate to a plasmonic laser including a substrate and a coaxial plasmonic cavity formed on the substrate and adapted to facilitate a plasmonic mode. The plasmonic laser further includes an electrical pumping circuit configured to electrically pump the plasmonic laser. The coaxial plasmonic cavity includes a peripheral plasmonic ring structure, a central plasmonic core and a gain structure arranged between the peripheral plasmonic ring structure and the central plasmonic core. The gain structure includes one or more ring-shaped quantum wells as gain material. The one or more ring-shaped quantum wells have a surface that is aligned orthogonal to a surface of the substrate. The electrical pumping circuit is configured to pump the plasmonic laser via the peripheral plasmonic ring structure and the central plasmonic core.