Patents by Inventor Swaminathan Srinivasan
Swaminathan Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180209043Abstract: Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports.Type: ApplicationFiled: March 22, 2018Publication date: July 26, 2018Inventors: SHU-KWAN LAU, ZHEPENG CONG, MEHMET TUGRUL SAMIR, ZHIYUAN YE, DAVID K. CARLSON, XUEBIN LI, ERROL ANTONIO C. SANCHEZ, SWAMINATHAN SRINIVASAN
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Publication number: 20180065178Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.Type: ApplicationFiled: October 9, 2017Publication date: March 8, 2018Inventors: Christopher A. Rowland, Anantha K. Subramani, Kasiraman Krishnan, Kartik Ramaswamy, Thomas B. Brezoczky, Swaminathan Srinivasan, Jennifer Y. Sun, Simon Yavelberg, Srinivas D. Nemani, Nag B. Patibandla, Hou T. Ng
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Publication number: 20170203364Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material over the platen, a laser configured to produce a laser beam, a controller configured to direct the laser beam to locations specified by data stored in a computer-readable medium to cause the feed material to fuse, and a plasma source configured to produce ions that are directed to substantially the same location on the platen as the laser beam.Type: ApplicationFiled: July 16, 2015Publication date: July 20, 2017Inventors: Kartik Ramaswamy, Anantha K. Subramani, Kasiraman Krishnan, Jennifer Y. Sun, Srinivas D. Nemani, Thomas B. Brezoczky, Christopher A. Rowland, Simon Yavelberg, Swaminathan Srinivasan, Nag B. Patibandla, Ellie Y. Yieh, Hou T. Ng
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Publication number: 20170203363Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.Type: ApplicationFiled: July 8, 2015Publication date: July 20, 2017Inventors: Christopher A. Rowland, Anantha K. Subramani, Kasiraman Krishnan, Kartik Ramaswamy, Thomas B. Brezoczky, Swaminathan Srinivasan, Jennifer Y. Sun, Simon Yavelberg, Srinivas D. Nemani, Nag B. Patibandla, Hou T. Ng
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Publication number: 20170182556Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.Type: ApplicationFiled: July 16, 2015Publication date: June 29, 2017Inventors: Kartik Ramaswamy, Anantha K. Subramani, Kasiraman Krishnan, Jennifer Y. Sun, Thomas B. Brezoczky, Christopher A. Rowland, Srinivas D. Nemani, Swaminathan Srinivasan, Simon Yavelberg, Ellie Y. Yieh, Hou T. Ng
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Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films
Patent number: 9287123Abstract: In one embodiment, a method for etching a substrate includes providing a reactive ambient around the substrate when a non-crystalline layer is disposed over a first crystalline material in the substrate; generating a plasma in a plasma chamber; modifying a shape of a plasma sheath boundary of the plasma; extracting ions from the plasma; and directing the ions to the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions and reactive ambient are effective to form an angled cavity through the non-crystalline layer to expose a portion of the first crystalline material at a bottom of the angled cavity, and the angled cavity forms a non-zero angle of inclination with respect to the perpendicular.Type: GrantFiled: August 14, 2014Date of Patent: March 15, 2016Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Swaminathan Srinivasan, Fareen Adeni Khaja, Simon Ruffell, John Hautala -
TECHNIQUES FOR FORMING ANGLED STRUCTURES FOR REDUCED DEFECTS IN HETEROEPITAXY OF SEMICONDUCTOR FILMS
Publication number: 20150311073Abstract: In one embodiment, a method for etching a substrate includes providing a reactive ambient around the substrate when a non-crystalline layer is disposed over a first crystalline material in the substrate; generating a plasma in a plasma chamber; modifying a shape of a plasma sheath boundary of the plasma; extracting ions from the plasma; and directing the ions to the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions and reactive ambient are effective to form an angled cavity through the non-crystalline layer to expose a portion of the first crystalline material at a bottom of the angled cavity, and the angled cavity forms a non-zero angle of inclination with respect to the perpendicular.Type: ApplicationFiled: August 14, 2014Publication date: October 29, 2015Inventors: SWAMINATHAN SRINIVASAN, FAREEN ADENI KHAJA, SIMON RUFFELL, JOHN HAUTALA -
Patent number: 8871645Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: GrantFiled: September 11, 2009Date of Patent: October 28, 2014Assignee: Applied Materials, Inc.Inventors: Udayan Ganguly, Yoshita Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathan Srinivasan, Jacob Newman
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Patent number: 8802522Abstract: Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.Type: GrantFiled: July 25, 2011Date of Patent: August 12, 2014Assignee: Applied Materials, Inc.Inventors: Michael G. Ward, Igor V. Peidous, Sunny Chiang, Yen B. Ta, Andrew Darlak, Peter I. Porshnev, Swaminathan Srinivasan
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Publication number: 20140137801Abstract: Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports.Type: ApplicationFiled: October 7, 2013Publication date: May 22, 2014Applicant: APPLIED MATERIALS, INC.Inventors: SHU-KWAN LAU, ZHEPENG CONG, MEHMET TUGRUL SAMIR, ZHIYUAN YE, DAVID K. CARLSON, XUEBIN LI, ERROL ANTONIO C. SANCHEZ, SWAMINATHAN SRINIVASAN
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Publication number: 20130243971Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.Type: ApplicationFiled: March 14, 2012Publication date: September 19, 2013Applicant: Applied Materials, Inc.Inventors: David Thompson, Pravin K. Narwankar, Swaminathan Srinivasan, Sukti Chatterjee, Abhilash Mayur, Kashif Maqsood
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Publication number: 20120171855Abstract: Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.Type: ApplicationFiled: July 25, 2011Publication date: July 5, 2012Applicant: APPLIED MATERIALS, INC.Inventors: MICHAEL G. WARD, IGOR V. PEIDOUS, SUNNY CHIANG, YEN B. TA, ANDREW DARLAK, PETER I. PORSHNEV, SWAMINATHAN SRINIVASAN
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Publication number: 20120088356Abstract: An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.Type: ApplicationFiled: September 7, 2011Publication date: April 12, 2012Applicant: APPLIED MATERIALS, INC.Inventors: KARTIK SANTHANAM, MARTIN A. HILKENE, MATTHEW D. SCOTNEY-CASTLE, PETER I. PORSHNEV, SWAMINATHAN SRINIVASAN, SUNDAR RAMAMURTHY
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Publication number: 20110065276Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: ApplicationFiled: March 10, 2010Publication date: March 17, 2011Applicant: Applied Materials, Inc.Inventors: Udayan Ganguly, Joseph M. Ranish, Aaron M. Hunter, Jing Tang, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Wei Liu, Johanes F. Swenberg, Shiyu Sun
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Publication number: 20110061812Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: ApplicationFiled: March 10, 2010Publication date: March 17, 2011Applicant: Applied Materials, Inc.Inventors: Udayan Ganguly, Yoshitaka Yokota, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Wei Liu, Johanes F. Swenberg, Jose A. Marin, Aijit Balakrishna, Jacob Newman, Stephen C. Hickerson
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Publication number: 20110061810Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: ApplicationFiled: March 10, 2010Publication date: March 17, 2011Applicant: Applied Materials, Inc.Inventors: Udayan Ganguly, Joseph M. Ranish, Aaron M. Hunter, Jing Tang, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Johanes F. Swenberg, Anchuan Wang, Nitin K. Ingle, Manish Hemkar, Jose A. Marin
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Publication number: 20100062603Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: ApplicationFiled: September 11, 2009Publication date: March 11, 2010Inventors: Udayan Ganguly, Yoshita Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathan Srinivasan, Jacob Newman
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Patent number: 6178189Abstract: Multi-layer, semiconductor devices are configured to reduce stress by the removal of much of the structure which does not actually contribute to device performance. In one embodiment, trough between mesas which define light emitting facets in a laser diode bar are etched well into the substrate to remove all layers of different compositions there. In another embodiment, troughs are also etched in the backside of the substrate of a laser diode structure where the troughs are aligned along axes perpendicular to the axes of the mesas. The removal of stress permits more accurate alignment of the multiple facets along a single axis when the laser bar is bonded to a heat sink. The accurate alignment minimizes the placement constraints on the position of a microlens for achieving maximum power output and coupling efficiency for optical fibers coupled to the microlens.Type: GrantFiled: May 3, 1999Date of Patent: January 23, 2001Assignee: Opto Power CorporationInventors: Swaminathan Srinivasan, Rushikesh M. Patel
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Patent number: 6091752Abstract: Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.Type: GrantFiled: March 17, 1998Date of Patent: July 18, 2000Assignee: Opto Power CorporationInventors: Xiaoquang He, Swaminathan Srinivasan