Patents by Inventor SWAMINATHAR SRINIVASAN

SWAMINATHAR SRINIVASAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
    Patent number: 9530898
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: December 27, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Udayan Ganguly, Yoshitaka Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathar Srinivasan, Jacob Newman
  • SEMICONDUCTOR DEVICES SUITABLE FOR NARROW PITCH APPLICATIONS AND METHODS OF FABRICATION THEREOF
    Publication number: 20150102396
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 16, 2015
    Inventors: UDAYAN GANGULY, YOSHITAKA YOKOTA, JING TANG, SUNDERRAJ THIRUPAPULIYUR, CHRISTOPHER SEAN OLSEN, SHIYU SUN, TZE WING POON, WEI LIU, JOHANES SWENBERG, VICKY U. NGUYEN, SWAMINATHAR SRINIVASAN, JACOB NEWMAN