Patents by Inventor Swarna L. Navubothu

Swarna L. Navubothu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8581647
    Abstract: A method includes tracking a tuning voltage at a first circuit coupled to a first drain node of a first supply of a charge pump. The method also includes tracking the tuning voltage at a second circuit coupled to a second drain node of a second supply of the charge pump. The method further includes stabilizing a first voltage of the first drain node and a second voltage of the second drain node responsive to the tuning voltage.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: November 12, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Cheng Zhong, Swarna L. Navubothu, Nam V. Dang, Xiaohua Kong
  • Patent number: 8581667
    Abstract: A circuit includes a first path including a first transistor and a first current source. The first transistor is responsive to a tuning voltage. The circuit also includes a tuning voltage range extension circuit responsive to the tuning voltage. The tuning voltage range extension circuit is configured to selectively change current supplied by the first path as the tuning voltage exceeds a capacity threshold of the first transistor.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: November 12, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Swarna L. Navubothu, Cheng Zhong, Nam V. Dang, Xiaohua Kong
  • Publication number: 20130120071
    Abstract: A circuit includes a first path including a first transistor and a first current source. The first transistor is responsive to a tuning voltage. The circuit also includes a tuning voltage range extension circuit responsive to the tuning voltage. The tuning voltage range extension circuit is configured to selectively change current supplied by the first path as the tuning voltage exceeds a capacity threshold of the first transistor.
    Type: Application
    Filed: November 11, 2011
    Publication date: May 16, 2013
    Applicant: QUALCOMM INCORPORATED
    Inventors: Swarna L. Navubothu, Cheng Zhong, Nam V. Dang, Xiaohua Kong
  • Publication number: 20130120040
    Abstract: A method includes tracking a tuning voltage at a first circuit coupled to a first drain node of a first supply of a charge pump. The method also includes tracking the tuning voltage at a second circuit coupled to a second drain node of a second supply of the charge pump. The method further includes stabilizing a first voltage of the first drain node and a second voltage of the second drain node responsive to the tuning voltage.
    Type: Application
    Filed: November 10, 2011
    Publication date: May 16, 2013
    Applicant: QUALCOMM INCORPORATED
    Inventors: Cheng Zhong, Swarna L. Navubothu, Nam V. Dang, Xiaohua Kong