Abstract: Corrosion resistant thermoelectric devices and methods of manufacturing them are disclosed herein. In some embodiments, a corrosion resistant thermoelectric device includes a semiconductor layer; a corrosion resistant top metallization layer formed on a top surface of the semiconductor layer; and a corrosion resistant bottom metallization layer formed on a bottom surface of the semiconductor layer, where the bottom surface of the semiconductor layer is opposite of the top surface of the semiconductor layer. In this way, the corrosion resistance of the device is provided by the intrinsic properties of the materials used rather than provided by the packaging or a surface coating. As such, the corrosion protection can be ensured and verified by control of the materials used to construct the device. This approach is also less susceptible to damage from shipment, handling, integration, attachment, and assembly operations because the corrosion protection is intrinsic to the materials used in construction.