Patents by Inventor Swati Mehta

Swati Mehta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210030671
    Abstract: Cinacalcet is approved and marketed as hydrochloride salt in a solid dosage form indicated for the treatment of secondary hyperparathyroidism resulting from chronic kidney disease and for the treatment of hypercalcemia in patients with either parathyroid carcinoma or hyperparathyroidism. Current marketed products are not allowed to be divided and to be taken whole during administration. Patients having swallowing difficulty may not show adherence to such regimen. The present invention therefore provides liquid dosage forms of Cinacalcet or pharmaceutically acceptable salt thereof.
    Type: Application
    Filed: March 30, 2019
    Publication date: February 4, 2021
    Inventors: Swati NAGAR, Sandip MEHTA, Manish UMRETHIA, Jayanta Kumar MANDAL
  • Patent number: 10742912
    Abstract: Pixel arrangements in time-of-flight sensors are presented that include sensing elements that establish charges related to incident light, charge storage elements that accumulate integrated charges transferred from the sensing elements, and diffusion nodes configured to establish measurement voltages representative of the integrated charges that are dumped from the charge storage elements. The pixel arrangement includes analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to a measurement phase. The analog domain output circuitry subtracts the stored reset voltage from the stored measurement voltage for processing into a pixel output voltage that at least partially reduces readout voltage uncertainty of the pixel arrangement.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: August 11, 2020
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Cyrus Soli Bamji, Onur Can Akkaya, Tamer Elkhatib, Swati Mehta, Satyadev H. Nagaraja, Vijay Rajasekaran
  • Publication number: 20190335124
    Abstract: Pixel arrangements in time-of-flight sensors are presented that include sensing elements that establish charges related to incident light, charge storage elements that accumulate integrated charges transferred from the sensing elements, and diffusion nodes configured to establish measurement voltages representative of the integrated charges that are dumped from the charge storage elements. The pixel arrangement includes analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to a measurement phase. The analog domain output circuitry subtracts the stored reset voltage from the stored measurement voltage for processing into a pixel output voltage that at least partially reduces readout voltage uncertainty of the pixel arrangement.
    Type: Application
    Filed: July 5, 2019
    Publication date: October 31, 2019
    Inventors: Cyrus Soli Bamji, Onur Can Akkaya, Tamer Elkhatib, Swati Mehta, Satyadev H. Nagaraja, Vijay Rajasekaran
  • Patent number: 10389957
    Abstract: Pixel arrangements in time-of-flight sensors are presented that include sensing elements that establish charges related to incident light, charge storage elements that accumulate integrated charges transferred from the sensing elements, and diffusion nodes configured to establish measurement voltages representative of the integrated charges that are dumped from the charge storage elements. The pixel arrangement includes analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to a measurement phase. The analog domain output circuitry subtracts the stored reset voltage from the stored measurement voltage for processing into a pixel output voltage that at least partially reduces readout voltage uncertainty of the pixel arrangement.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: August 20, 2019
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Cyrus Soli Bamji, Onur Can Akkaya, Tamer Elkhatib, Swati Mehta, Satyadev H. Nagaraja, Vijay Rajasekaran
  • Patent number: 10134926
    Abstract: A time-of-flight detector includes a semiconductor layer and a light modulation structure. The semiconductor layer is configured to translate light radiation into electrical charge. The light modulation structure is configured to increase a path of interaction of light radiation through the semiconductor layer. In some example implementations, the light modulation structure is configured to deflect at least some light radiation at an increased angle through the semiconductor layer. In some example implementations, the light modulation structure is configured to reflect light radiation more than once through the semiconductor layer.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: November 20, 2018
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Onur Can Akkaya, Satyadev Nagaraja, Tamer Elkhatib, Cyrus Bamji, Swati Mehta
  • Publication number: 20180176492
    Abstract: Pixel arrangements in time-of-flight sensors are presented that include sensing elements that establish charges related to incident light, charge storage elements that accumulate integrated charges transferred from the sensing elements, and diffusion nodes configured to establish measurement voltages representative of the integrated charges that are dumped from the charge storage elements. The pixel arrangement includes analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to a measurement phase. The analog domain output circuitry subtracts the stored reset voltage from the stored measurement voltage for processing into a pixel output voltage that at least partially reduces readout voltage uncertainty of the pixel arrangement.
    Type: Application
    Filed: December 20, 2016
    Publication date: June 21, 2018
    Inventors: Cyrus Soli Bamji, Onur Can Akkaya, Tamer Elkhatib, Swati Mehta, Satyadev H. Nagaraja, Vijay Rajasekaran
  • Patent number: 9923003
    Abstract: A CMOS time-of-flight image sensor must be robust to interface traps and fixed charges which may be present due to fabrication and which may cause an undesired induced electric field in the silicon substrate. This undesired induced electrical field is reduced by introducing a hydrogen-enriched dielectric material. Further remedial techniques can include applying ultraviolet light and/or performing a plasma treatment. Another possible approach adds a passivation doping layer at a top of the detector as a shield against the undesired induced electric field. One or more of the above techniques can be used to prevent any unstable behavior of the time-of-flight sensor.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: March 20, 2018
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Tamer Elkhatib, Vei-Han Chan, William Qian, Onur Can Akkaya, Swati Mehta, Cyrus Bamji
  • Publication number: 20170005124
    Abstract: A CMOS time-of-flight image sensor must be robust to interface traps and fixed charges which may be present due to fabrication and which may cause an undesired induced electric field in the silicon substrate. This undesired induced electrical field is reduced by introducing a hydrogen-enriched dielectric material. Further remedial techniques can include applying ultraviolet light and/or performing a plasma treatment. Another possible approach adds a passivation doping layer at a top of the detector as a shield against the undesired induced electric field. One or more of the above techniques can be used to prevent any unstable behavior of the time-of-flight sensor.
    Type: Application
    Filed: June 30, 2015
    Publication date: January 5, 2017
    Inventors: Tamer Elkhatib, Vei-Han Chan, William Qian, Onur Can Akkaya, Swati Mehta, Cyrus Bamji
  • Patent number: 9497440
    Abstract: An imager includes an emitter, an array of pixel elements, and driver logic. The emitter releases bursts of light pulses with pauses between bursts. Each element of the array has a finger gate biasable to attract charge to the surface, a reading node to collect the charge, and a transfer gate to admit such charge to the reading node and to deter such charge from being absorbed into the finger gate. The driver logic biases the finger gates with the modulated light pulses such that the finger gates of adjacent first and second elements cycle with unequal phase into and out of a charge-attracting state. To reduce the effects of ambient light on the imager, the driver logic is configured to bias the transfer gates so that the charge is admitted to the reading node only during the bursts and is prevented from reaching the reading node during the pauses.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: November 15, 2016
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Cyrus Bamji, Tamer Elkhatib, Swati Mehta, Zhanping Xu
  • Publication number: 20160225922
    Abstract: A time-of-flight detector includes a semiconductor layer and a light modulation structure. The semiconductor layer is configured to translate light radiation into electrical charge. The light modulation structure is configured to increase a path of interaction of light radiation through the semiconductor layer. In some example implementations, the light modulation structure is configured to deflect at least some light radiation at an increased angle through the semiconductor layer. In some example implementations, the light modulation structure is configured to reflect light radiation more than once through the semiconductor layer.
    Type: Application
    Filed: June 30, 2015
    Publication date: August 4, 2016
    Inventors: Onur Can Akkaya, Satyadev Nagaraja, Tamer Elkhatib, Cyrus Bamji, Swati Mehta
  • Publication number: 20160225812
    Abstract: A CMOS image sensor pixel has an integrated shallow trench isolation structure, resulting in higher optical sensitivity in general, and specifically for long wavelengths (red, near infrared, infrared). The shallow trench isolation structure acts as an optical grating that reflects and diffracts light so that an increased optical energy (photo generation) is observed in the photosensitive semiconductor layer of the pixel. An increase in dark current is avoided by passivating the shallow trench isolation structure with dopant which was implanted within the photosensitive semiconductor layer. Annealing in a standard CMOS process causes the dopant to diffuse toward the shallow trench isolation structure. The pixel can be configured as a time-of-flight sensor. The shallow trench isolation structure acts as a physical barrier for electrical charge motion, resulting in a higher modulation contrast pixel. Further, front side or backside illumination can be used.
    Type: Application
    Filed: June 30, 2015
    Publication date: August 4, 2016
    Inventors: Tamer Elkhatib, Onur Can Akkaya, Swati Mehta, Cyrus Bamji
  • Patent number: 9052382
    Abstract: Embodiments of the present invention provide methods to produce a high performance, feature rich TOF system, phase-based or otherwise using small TOF pixels, single-ended or preferably differential, as well as TOF systems so designed. IC chip area required for pixels is reduced by intelligently off-loading or removing from within the pixel certain components and/or functionality. In some embodiments during a single TOF system capture period, analog values from each pixel are repeatedly sampled and converted to digital values, which are combined and manipulated on the sensor chip. Combining this plurality of values enables appropriately compact data from the sensor chip. Embodiments of the present invention implement a TOF system with high ambient light resilience, high dynamic range, low motion blur and dealiasing support, while advantageously reducing pixel area size relative to prior art TOF pixels.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: June 9, 2015
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Cyrus Bamji, Swati Mehta
  • Publication number: 20140300700
    Abstract: An imager includes an emitter, an array of pixel elements, and driver logic. The emitter releases bursts of light pulses with pauses between bursts. Each element of the array has a finger gate biasable to attract charge to the surface, a reading node to collect the charge, and a transfer gate to admit such charge to the reading node and to deter such charge from being absorbed into the finger gate. The driver logic biases the finger gates with the modulated light pulses such that the finger gates of adjacent first and second elements cycle with unequal phase into and out of a charge-attracting state. To reduce the effects of ambient light on the imager, the driver logic is configured to bias the transfer gates so that the charge is admitted to the reading node only during the bursts and is prevented from reaching the reading node during the pauses.
    Type: Application
    Filed: April 5, 2013
    Publication date: October 9, 2014
    Applicant: MICROSOFT CORPORATION
    Inventors: Cyrus Bamji, Tamer Elkhatib, Swati Mehta, Zhanping Xu
  • Patent number: 8849616
    Abstract: An analytical tool useable with complex systems receives as input various system parameters to predict whether sufficiently accurate quality depth data will be provided by the TOF system. Depth data quality estimates involve dividing system operation into smaller operations whose individual depth data quality contributions can be more readily computed. The effect of the individual operations is combined and the tool outputs a depth data quality estimate accounting for the net result of the various unique operations performed by the system. When used with a TOF system, input parameters may include magnitude and angular distribution of TOF emitted optical energy, desired signal/noise, sensor characteristics, TOF imaging optics, target object distances and locations, and magnitude of ambient light. Analytical tool output data can ensure adequate calculation accuracy to optimize the TOF system pre-mass production, even for TOF systems whose sequence of operations and sensor operations are flexibly programmable.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: September 30, 2014
    Assignee: Microsoft Corporation
    Inventors: Swati Mehta, Cyrus Bamji
  • Publication number: 20140043598
    Abstract: Embodiments of the present invention provide methods to produce a high performance, feature rich TOF system, phase-based or otherwise using small TOF pixels, single-ended or preferably differential, as well as TOF systems so designed. IC chip area required for pixels is reduced by intelligently off-loading or removing from within the pixel certain components and/or functionality. In some embodiments during a single TOF system capture period, analog values from each pixel are repeatedly sampled and converted to digital values, which are combined and manipulated on the sensor chip. Combining this plurality of values enables appropriately compact data from the sensor chip. Embodiments of the present invention implement a TOF system with high ambient light resilience, high dynamic range, low motion blur and dealiasing support, while advantageously reducing pixel area size relative to prior art TOF pixels.
    Type: Application
    Filed: October 18, 2013
    Publication date: February 13, 2014
    Applicant: MICROSOFT CORPORATION
    Inventors: Cyrus Bamji, Swati Mehta
  • Patent number: 8587773
    Abstract: Embodiments of the present invention provide methods to produce a high performance, feature rich TOF system, phase-based or otherwise using small TOF pixels, single-ended or preferably differential, as well as TOF systems so designed. IC chip area required for pixels is reduced by intelligently off-loading or removing from within the pixel certain components and/or functionality. In some embodiments during a single TOF system capture period, analog values from each pixel are repeatedly sampled and converted to digital values, which are combined and manipulated on the sensor chip. Combining this plurality of values enables appropriately compact data from the sensor chip. Embodiments of the present invention implement a TOF system with high ambient light resilience, high dynamic range, low motion blur and dealiasing support, while advantageously reducing pixel area size relative to prior art TOF pixels.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: November 19, 2013
    Assignee: Microsoft Corporation
    Inventors: Cyrus Bamji, Swati Mehta
  • Patent number: 8363212
    Abstract: Embodiments of the present invention provide methods to produce a high performance, feature rich TOF system, phase-based or otherwise using small TOF pixels, single-ended or preferably differential, as well as TOF systems so designed. IC chip area required for pixels is reduced by intelligently off-loading or removing from within the pixel certain components and/or functionality. In some embodiments during a single TOF system capture period, analog values from each pixel are repeatedly sampled and converted to digital values, which are combined and manipulated on the sensor chip. Combining this plurality of values enables appropriately compact data from the sensor chip. Embodiments of the present invention implement a TOF system with high ambient light resilience, high dynamic range, low motion blur and dealiasing support, while advantageously reducing pixel area size relative to prior art TOF pixels.
    Type: Grant
    Filed: April 2, 2012
    Date of Patent: January 29, 2013
    Assignee: Microsoft Corporation
    Inventors: Cyrus Bamji, Swati Mehta
  • Patent number: 8314924
    Abstract: A CMOS-implementable TOF detector promptly collects charge whose creation time can be precisely known, while rejecting collection of potentially late arriving charge whose creation time may not be precisely known. Charges created in upper regions of the detector structure are ensured to be rapidly collected, while charges created in the lower regions of the detector structure, potentially late arriving charges, are inhibiting from being collected.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: November 20, 2012
    Assignee: Microsoft Corporation
    Inventors: Cyrus Bamji, Swati Mehta, Tamer Ahmed Taha Elkhatib
  • Publication number: 20120188530
    Abstract: Embodiments of the present invention provide methods to produce a high performance, feature rich TOF system, phase-based or otherwise using small TOF pixels, single-ended or preferably differential, as well as TOF systems so designed. IC chip area required for pixels is reduced by intelligently off-loading or removing from within the pixel certain components and/or functionality. In some embodiments during a single TOF system capture period, analog values from each pixel are repeatedly sampled and converted to digital values, which are combined and manipulated on the sensor chip. Combining this plurality of values enables appropriately compact data from the sensor chip. Embodiments of the present invention implement a TOF system with high ambient light resilience, high dynamic range, low motion blur and dealiasing support, while advantageously reducing pixel area size relative to prior art TOF pixels.
    Type: Application
    Filed: April 2, 2012
    Publication date: July 26, 2012
    Applicant: MICROSOFT CORPORATION
    Inventors: Cyrus Bamji, Swati Mehta
  • Patent number: 8203699
    Abstract: Embodiments of the present invention provide methods to produce a high performance, feature rich TOF system, phase-based or otherwise using small TOF pixels, single-ended or preferably differential, as well as TOF systems so designed. IC chip area required for pixels is reduced by intelligently off-loading or removing from within the pixel certain components and/or functionality. In some embodiments during a single TOF system capture period, analog values from each pixel are repeatedly sampled and converted to digital values, which are combined and manipulated on the sensor chip. Combining this plurality of values enables appropriately compact data from the sensor chip. Embodiments of the present invention implement a TOF system with high ambient light resilience, high dynamic range, low motion blur and dealiasing support, while advantageously reducing pixel area size relative to prior art TOF pixels.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: June 19, 2012
    Assignee: Microsoft Corporation
    Inventors: Cyrus Bamji, Swati Mehta