Abstract: A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes.

Abstract: The present invention involves a method of treating cancer using a mutant adenovirus that is targeted to cells with a mutant retinoblastoma pathway. The mutant adenovirus is able to kill the tumor cells without harming the cells with a wild type retinoblastoma pathway.

Abstract: An adapter device for securement to an output rotary drive of a drill. The adapter comprises a housing having an input connector securable to the rotary drive, and an output connector. A fixed mode cam is immovably secured with respect to the housing. A displaceable floating cam is provided intermediate the input connector and a displaceable keying element. The floating cam is displaceable in and out of engagement with the input keying element. An adjusting assembly is provided to displace the keying element in and out of engagement with the fixed mode cam and the floating cam whereby the input connector can impart a rotary drive, rotary drive and impact forces or impact forces only to the output connector.