Abstract: A tunable coil antenna (2) is disclosed, in which the tunable coil antenna (2) comprises a first antenna terminal (12), and a series of two or more incomplete turns (4), each incomplete turn (4) comprising a first end (8) and a second end (10), the first end (8a) of the first incomplete turn (4a) being electrically connected to the first antenna terminal (12), the first end (8) of each subsequent incomplete turn (4) arranged to be electrically connected to the second end (10) of a preceding incomplete turn (4) in the series, the second end (10) of each incomplete turn (4) arranged to either be electrically connected to the first end (8) of a subsequent incomplete turn (4) in the series or to provide a second antenna terminal.

Abstract: Disclosed is a method of adjusting the receive frequency of a radio frequency (RF) receiver die (4), the RF receiver die (4) comprising a mixer (8) with an associated local oscillator (10) and a first low-noise amplifier (6) arranged to operate over a first frequency range, the method comprising affixing a second low-noise amplifier (40) arranged to operate over a second frequency range to the RF receiver die (4).

Abstract: Disclosed is a method of adjusting the receive frequency of a radio frequency (RF) receiver die (4), the RF receiver die (4) comprising a mixer (8) with an associated local oscillator (10) and a first low-noise amplifier (6) arranged to operate over a first frequency range, the method comprising affixing a second low-noise amplifier (40) arranged to operate over a second frequency range to the RF receiver die (4).

Abstract: A tunable coil antenna (2) is disclosed, in which the tunable coil antenna (2) comprises a first antenna terminal (12), and a series of two or more incomplete turns (4), each incomplete turn (4) comprising a first end (8) and a second end (10), the first end (8a) of the first incomplete turn (4a) being electrically connected to the first antenna terminal (12), the first end (8) of each subsequent incomplete turn (4) arranged to be electrically connected to the second end (10) of a preceding incomplete turn (4) in the series, the second end (10) of each incomplete turn (4) arranged to either be electrically connected to the first end (8) of a subsequent incomplete turn (4) in the series or to provide a second antenna terminal.

Abstract: A memory device and a method for refreshing the memory device. The memory device includes a memory cell capable of storing two bits of data. One bit is referred to as the normal data bit and the other bit is referred to as the complementary data bit. Each memory cell has an associated dynamic reference cell. The normal data is refreshed by latching refresh data into a data latch and ORing the latched data with input data. The refresh data is written to the corresponding memory location. The data for the complementary data bit is refreshed by latching complementary data bit refresh data into the complementary data latches and writing to the memory cell. The normal and complementary data bits are refreshed before each read operation.

Abstract: For generating a margining voltage for biasing a gate of a CAM (content addressable memory) cell of a flash memory device fabricated on a semiconductor wafer, a high voltage source is provided with a voltage generator fabricated on the semiconductor wafer. A low voltage source is provided from a node coupled to the voltage generator fabricated on the semiconductor wafer. For example, the voltage generator for providing the high voltage source includes a voltage regulator and a charge pump fabricated on the semiconductor wafer, and the low voltage source is the ground node. In addition, a first transistor is coupled to the high voltage source, and a second transistor is coupled to the low voltage source. A first resistor is coupled between the first transistor and an output node, and a second resistor coupled between the second transistor and the output node. The margining voltage is generated at the output node.