Patents by Inventor Syan-Mang Jang

Syan-Mang Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a blocking layer
    Patent number: 6620745
    Abstract: A method is provided for forming a blocking layer in a multilayer semiconductor device for blocking diffusion of a chemical species including the steps of providing an insulating layer including a target surface for forming a metal nitride layer thereon said insulating layer forming a portion of a multilayer semiconductor device; treating the target surface with an RF generated plasma to cause a density increase over a thickness adjacent to and including a target surface sufficient to reduce a diffusion rate of chemical species therethrough; forming at least one metal nitride layer over the target surface; and, carrying out a photolithographic process wherein the surface of the at least one metal nitride layer is patterned for etching.
    Type: Grant
    Filed: October 19, 2001
    Date of Patent: September 16, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Syan-Mang Jang, Tien-I Bao, Lain-Jong Li, Shwang-Ming Jeng
  • Method for forming a blocking layer
    Publication number: 20030077887
    Abstract: A method is provided for forming a blocking layer in a multilayer semiconductor device for blocking diffusion of a chemical species including the steps of providing an insulating layer including a target surface for forming a metal nitride layer thereon said insulating layer forming a portion of a multilayer semiconductor device; treating the target surface with an RF generated plasma to cause a density increase over a thickness adjacent to and including a target surface sufficient to reduce a diffusion rate of chemical species therethrough; forming at least one metal nitride layer over the target surface; and, carrying out a photolithographic process wherein the surface of the at least one metal nitride layer is patterned for etching.
    Type: Application
    Filed: October 19, 2001
    Publication date: April 24, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Syan-Mang Jang, Tien-I Bao, Lain-Jong Li, Shwang-Ming Jeng