Patents by Inventor Sybren Santermans

Sybren Santermans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a bioFET sensor including semiconductor fin or nanowire
    Patent number: 11735645
    Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.
    Type: Grant
    Filed: November 16, 2020
    Date of Patent: August 22, 2023
    Assignees: Imec VZW, Katholieke Universiteit Leuven, KU LEUVEN R&D
    Inventors: Koen Martens, Sybren Santermans, Geert Hellings, David Barge
  • Method for Forming a Sensor
    Publication number: 20210159321
    Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.
    Type: Application
    Filed: November 16, 2020
    Publication date: May 27, 2021
    Inventors: Koen Martens, Sybren Santermans, Geert Hellings, David Barge