Abstract: Systems and methods are described for transfer of a thin-film via implantation, wafer bonding, and separation. A method for transfer of a thin-film, includes: implanting a source crystal with ions along a crystallographic channel and at a temperature of at least approximately 200° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region. The systems and methods provide advantages because the electrical carriers in the crystal, and consequently the thin-film, are not deactivated and the quality of the transferred thin-film is improved.

Abstract: A semiconductor structure (20) includes a silicon layer (16) formed on an oxide layer (14). Gettering sinks (31, 32) are formed in the silicon layer (16). Lateral gettering is performed to effectively remove impurities from a first section (26) of the semiconductor layer (16). An insulated gate semiconductor device (40) is then formed in semiconductor layer (16), wherein a channel region (55) of the device (40) is formed in the first section (26) of the semiconductor layer (16). A gate dielectric layer (42) of the device (40) is formed over a portion of the first section (26) after the lateral gettering process, thereby enhancing the integrity of the gate dielectric layer (42).