Abstract: A magnetoresistive head having improved overwrite performance and a small trackwidth. The magnetoresistive head having a magnetic yoke formed of first and second poles joined at a back gap region and having an opposite write gap region. A pedestal with a top portion constructed of a high saturation moment material is provided on the first pole, limited to the write gap region and spaced from the read element so as to prevent popcorn noise in read sensor. The high moment pedestal is raised above surrounding structure causing the second pole to define a very low apex angle in the write gap region.

Abstract: Magnetically permeable, high magnetic saturation, primarily iron NiFe alloys are formed on thin seed layers by sputtering and electroplating. Pole layers a few microns in thickness can be formed of magnetically superlative, primarily iron NiFe alloys in this manner for transducers that may be used in information storage systems. The seed layers may include Ni0.55Fe0.45 or Cr, and the magnetically superlative NiFe alloy may be Ni0.45Fe0.55. The magnetically superlative NiFe alloy has increased concentration of a body centered cubic crystalline phase and/or a decreased concentration of a face centered cubic crystalline phase compared with conventional Ni0.45Fe0.55. A laminated pole structure has a dielectric interlayer along with seed layers and magnetically superlative, primarily iron NiFe layers.

Abstract: The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above.

Abstract: An inductive write head includes a first pole and a second pole that form a yoke having a write gap between the first pole and second pole. The second pole is formed of a particular Co100-a-bZRaCRb compound. More specifically, the second pole is formed where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. The magnetic write element also includes a conductive coil which lies between the first pole and the second pole. The inductive write head also includes a first yoke pedestal attached to the first pole, and a second yoke pedestal attached to the second pole, with the write gap formed therebetween. Further, the first yoke pedestal has a pedestal width that defines the write element trackwidth and that is smaller than the pedestal width of the second yoke pedestal.

Abstract: An inductive write head includes a first pole and a second pole that form a yoke having a write gap between the first pole and second pole. The second pole is formed of a particular Co100-a-bZraCrb compound. More specifically, the second pole is formed where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. The magnetic write element also includes a conductive coil which lies between the first pole and the second pole. The inductive write head also includes a first yoke pedestal attached to the first pole, and a second yoke pedestal attached to the second pole, with the write gap formed therebetween. Further, the first yoke pedestal has a pedestal width that defines the write element trackwidth and that is smaller than the pedestal width of the second yoke pedestal.

Abstract: Magnetoresist elements having good giant magnetoresistance characteristics of at least 6 percent are prepared by depositing alternating layers of magnetic alloy and non-magnetic copper or copper alloys in a thickness of 22-40 angstroms, which element, as deposited, exhibits ferromagnetic coupling. The multi-layer element, which may include up to 20 bilayers of magnetic material/non-magnetic material is then annealed at a temperature of about 250.degree.-325.degree. C. for a period of at least 15 minutes up to 10 hours. The resulting element exhibits good GMR characteristics which are thermally stable, and insensitive to minor variations in the thickness of the non-magnetic layer.