Patents by Inventor Syed MK Bari

Syed MK Bari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mutiple range current sensor techniques
    Patent number: 11137419
    Abstract: Techniques for improved multiple-range current sensing are provided. In an example, a circuit can include a plurality of shunt resistors, a plurality of gain resistors, and a first switch. A first shunt resistor of the plurality of shunt resistors can be of a different type that the other shunt resistors of the plurality of shunt resistors. The plurality of gain resistors can include a first gain resistor of the same resistor type as the first shunt resistor. The first gain resistor can be a different resistor type than the other gain resistors of the plurality of gain resistors. The switch can be configured to couple the first shunt resistor with the load in a first state and to isolate the first shunt resistor from the load in a second state.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: October 5, 2021
    Assignee: Analog Devices International Unlimited Company
    Inventors: Hio Leong Chao, Hai Chen, Syed Mk Bari
  • MUTIPLE RANGE CURRENT SENSOR TECHNIQUES
    Publication number: 20210181238
    Abstract: Techniques for improved multiple-range current sensing are provided. In an example, a circuit can include a plurality of shunt resistors, a plurality of gain resistors, and a first switch. A first shunt resistor of the plurality of shunt resistors can be of a different type that the other shunt resistors of the plurality of shunt resistors. The plurality of gain resistors can include a first gain resistor of the same resistor type as the first shunt resistor. The first gain resistor can be a different resistor type than the other gain resistors of the plurality of gain resistors. The switch can be configured to couple the first shunt resistor with the load in a first state and to isolate the first shunt resistor from the load in a second state.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 17, 2021
    Inventors: Hio Leong Chao, Hai Chen, Syed MK Bari