Abstract: A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.

Abstract: An electrical device adapted to operate at a high operating ambient temperature includes an electrical component mounted inside a casing, a transmission/reception antenna and at least one electrical and mechanical connection between the electrical component and the antenna. The electrical and mechanical connection comprises a metal pad positioned under the casing, the antenna being connected to the pad; an electrical connection tab having a first end connected to the electrical component; and fixing means adapted to secure the pad and a second end of the connection tab of the component. The device is applicable to, for example, temperature sensors of the surface guided elastic wave type.

Abstract: A surface acoustic wave device: includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.

Abstract: An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Abstract: An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Abstract: A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips, positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.

Abstract: A transducer structure for a surface acoustic wave device, comprising a pair of inter-digitated comb electrodes, wherein the pair of inter-digitated comb electrodes comprises neighboring electrode means belonging to different comb electrodes and having a pitch p being defined as the edge-to-edge electrode means distance between two neighboring electrode means, the pitch p satisfying the Bragg condition; characterized in that the pair of inter-digitated comb electrodes comprises at least one region in which two or more neighboring electrode means belong to the same comb electrode while having an edge-to-edge distance to each other corresponding to the pitch p. The present disclosure relates also to a surface acoustic wave filter device.

Abstract: A surface acoustic wave tag device is disclosed, comprising: an acoustic wave propagating substrate, at least one transducer structure comprising inter-digitated comb electrodes, and at least one reflecting means, the reflecting means comprising at least one reflector, wherein the acoustic wave propagation substrate is a composite substrate comprising a base substrate and a piezoelectric layer, wherein the crystallographic orientation of the piezoelectric layer with respect to the base substrate is such that the propagation of a shear wave inside the piezoelectric layer and in the direction of propagation corresponding to the acoustic wave is enabled. A physical quantity determining device and a fabrication method of such surface acoustic wave tag device are also disclosed.

Abstract: A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.

Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.

Abstract: A surface elastic wave resonator comprises a piezoelectric material to propagate the surface elastic waves and a transducer inserted between a pair of reflectors comprising combs of interdigitated electrodes and having a number Nc of electrodes connected to a hot spot and an acoustic aperture W wherein the relative permittivity of the piezoelectric material is greater than about 15, a product of Nc·W/fa for the transducer being greater than 100 ?m·MHz?1, where fa is the antiresonance frequency of the resonator. A circuit comprises a load impedance and a resonator according to the invention and having an electrical response manifesting as a peak in the coefficient of reflection S11 at a frequency of a minimum value of the parameter S11 that is lower than ?10 dB, the antiresonance peak of the resonator being matched to the impedance of the load.

Abstract: An electrical device adapted to operate at a high operating ambient temperature includes an electrical component mounted inside a casing, a transmission/reception antenna and at least one electrical and mechanical connection between the electrical component and the antenna. The electrical and mechanical connection comprises a metal pad positioned under the casing, the antenna being connected to the pad; an electrical connection tab having a first end connected to the electrical component; and fixing means adapted to secure the pad and a second end of the connection tab of the component. The device is applicable to, for example, temperature sensors of the surface guided elastic wave type.

Abstract: A surface elastic wave device comprises a stack including: a thin film made of a piezoelectric first material; a substrate made from a second material; and exciting means for generating at least one surface acoustic wave propagation mode in the piezoelectric film; wherein: the first material is a single-crystal material and the second material is a crystalline material, the thickness of the thin film of piezoelectric first material being smaller than or equal to 20 ?m, and the first material and the second material having viscoelastic coefficients lower than or equal to those of quartz for the propagation mode induced by the exciting means.

Abstract: An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Abstract: A surface-guided bulk wave transducer includes a stack of an acoustic substrate, an electric ground plane, and a network of synchronous acoustic excitation sources with two combs of elementary piezoelectric transducers alternately interlaced two-by-two according to a periodic network step corresponding to a propagation mode of a surface-guided bulk wave of the acoustic substrate. Each elementary piezoelectric transducer includes a single and different rod with a parallelepipedal shape for which the nature, the cut of the piezoelectric material, the height h, and the width are selected for increasing the electromechanical coupling coefficient of the transducer assembly to a high level.

Abstract: A bulk wave piezoelectric resonator operating at a predetermined frequency includes a substrate block, having a plane face, a first thickness and consisting of a first material, a resonant plate having a length, width and second thickness, and consisting of a second piezoelectric material, first and second metal electrodes at least partly covering the resonant plate on each side and partly facing each other. The resonant plate is fixed perpendicularly in the vicinity of the plane face of the substrate block so that the width of the resonant plate and the first thickness of the substrate block have the same direction, and the first material, the second material, the first thickness of the block of substrate, the length, the width, the second thickness of the resonant plate are configured for trapping bulk waves at the operating frequency of the resonator and for producing a plane-plane type bulk wave piezoelectric resonator.

Abstract: A surface elastic wave resonator comprises a piezoelectric material to propagate the surface elastic waves and a transducer inserted between a pair of reflectors comprising combs of interdigitated electrodes and having a number Nc of electrodes connected to a hot spot and an acoustic aperture W wherein the relative permittivity of the piezoelectric material is greater than about 15, a product of Nc·W/fa for the transducer being greater than 100 ?m·MHz?1, where fa is the antiresonance frequency of the resonator. A circuit comprises a load impedance and a resonator according to the invention and having an electrical response manifesting as a peak in the coefficient of reflection S11 at a frequency of a minimum value of the parameter S11 that is lower than ?10 dB, the antiresonance peak of the resonator being matched to the impedance of the load.

Abstract: A piezoelectric and ferroelectric bulk wave transducer operating at a predetermined frequency includes a block of substrate, having a first thickness and in a first material, and a piezoelectric and ferroelectric transduction plate, having a length, a width and a second thickness, and in a second piezoelectric material, first and second metal electrodes covering the plate in the direction of the length thereof. The plate has first and second ferroelectric domains with alternating polarizations, distributed along the length of the plate according to a periodic pattern of pitch. The plate is attached perpendicularly to the block so that the width of the plate and the first thickness of the block are the same direction. The first and second material, the first thickness of the block, the length, the width, the second thickness, the pitch of the plate are configured for generating and trapping bulk waves at the operating frequency of the transducer, guided between both electrodes.

Abstract: A surface elastic wave device comprises a stack including: a thin film made of a piezoelectric first material; a substrate made from a second material; and exciting means for generating at least one surface acoustic wave propagation mode in the piezoelectric film; wherein: the first material is a single-crystal material and the second material is a crystalline material, the thickness of the thin film of piezoelectric first material being smaller than or equal to 20 ?m, and the first material and the second material having viscoelastic coefficients lower than or equal to those of quartz for the propagation mode induced by the exciting means.

Abstract: A method of interrogating sensors of SAW type, which allows notably the gathering of physical measurements of parameters carried out by SAW sensors, the method for gathering the measurement of an SAW sensor comprising a first step of generating and emitting an electromagnetic signal corresponding to the dilated time-reversal of a dilation coefficient k, of an impulse response signature which is characteristic of the SAW sensor, a second step of gathering a signal received as echo originating from the SAW sensor, a third step of determining a maximum of cross-correlation of the signal received as echo during the second step, the first step being applied with a set of values of the dilation coefficient k in a determined domain, the measurement of a physical parameter then being determined by the dilation coefficient k for which the power or the amplitude of the signal gathered as echo is a maximum.