Abstract: The method for producing a stack of films provided with at least one 3D-structured pattern including providing a first mold having a textured front face including a first 3D pattern, depositing a first layer of the stack on the textured front face so as to cover the first 3D pattern by a continuous layer, the first layer having a first face in contact with the front face of the mold, removing the first mold so as to release the first face of the first layer having a second 3D pattern complementary to the first 3D pattern and depositing a second layer of the stack on the first face of the first layer so as to cover the second 3D pattern by a continuous layer.

Abstract: The invention relates to a memristive element (M) formed by: a first electrode (10); a second electrode (30); and an active region (20) making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.

Abstract: The method for producing a stack of films provided with at least one 3D-structured pattern including providing a first mould having a textured front face including a first 3D pattern, depositing a first layer of the stack on the textured front face so as to cover the first 3D pattern by a continuous layer, the first layer having a first face in contact with the front face of the mould, removing the first mould so as to release the first face of the first layer having a second 3D pattern complementary to the first 3D pattern and depositing a second layer of the stack on the first face of the first layer so as to cover the second 3D pattern by a continuous layer.

Abstract: The invention relates to a memristive element (M) formed by: a first electrode (10); a second electrode (30); and an active region (20) making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.

Abstract: Process for the preparation of an insertion compound of an alkali metal in which the following successive stages are carried out: a) an organic complex of a transition metal or of a mixture of transition metals M in an oxidation state of greater than 2 is brought into contact with an alkali metal A in the ionic form and with an entity of formula Hb(XO4), where X is chosen from Si, S, Al, P, Ge, As or Mo and b has a value from 0 to 5, in a liquid medium in a closed chamber; the chamber is brought to a temperature T which makes possible the decomposition of the organic complex in the said liquid medium; the temperature and the pressure in the chamber are brought back to ambient temperature and atmospheric pressure and the insertion compound for an alkali metal of formula AMXO4, in which M is in the +2 oxidation state, is recovered.

Abstract: A device for mass storage of information, the device comprising: a substrate (30); an electrically-conductive tip (10) for atomic force microscopy located above the surface (31) of said substrate (30) in electrical contact therewith; and a voltage generator (41) for applying a potential difference between said tip (10) and said substrate (30); the device being characterized in that: said substrate (30) has a surface (31) of a material presenting electrical conductivity that is both electronic and ionic in nature; and in that said generator (41) is adapted to apply a potential difference that is sufficient to induce a redox reaction of said material that modifies the surface electrical conductivity of the substrate (30). The use of such a device (1) for mass storage of information.

Abstract: A device for mass storage of information, the device comprising: a substrate (30); an electrically-conductive tip (10) for atomic force microscopy located above the surface (31) of said substrate (30) in electrical contact therewith; and a voltage generator (41) for applying a potential difference between said tip (10) and said substrate (30); the device being characterized in that: said substrate (30) has a surface (31) of a material presenting electrical conductivity that is both electronic and ionic in nature; and in that said generator (41) is adapted to apply a potential difference that is sufficient to induce a redox reaction of said material that modifies the surface electrical conductivity of the substrate (30). The use of such a device (1) for mass storage of information.

Abstract: Lithium insertion compound having the following formula (I): Li?M?M1vM2wM3xM4yM5zB?(XO4??Z?)1??(I) M is selected from V2+, Mn2+, Fe2+, Co2+ and Ni2+; M1 is selected from Na+ and K+; M2 is selected from Mg2+, Zn2+, Cu2+, Ti2+, and Ca2+; M3 is selected from Al3+, Ti3+, Cr3+, Fe3+, Mn3+, Ga3+, and V3+; M4 is selected from Ti4+, Ge4+, Sn4+, V4+, and Zr4+; M5 is selected from V5+, Nb5+, and Ta5+; X is an element in oxidation state m, exclusively occupying a tetrahedral site and coordinated by oxygen or a halogen, which is selected from B3+, Al3+, V5+, Si4+, P5+, S6+, Ge4+ and mixtures thereof; Z is a halogen selected from F, Cl, Br and I; the coefficients ?, ?, v, w, x, y, z, ? and ? are all positive and satisfy the following equations: 0???2??(1); 1???2??(2); 0<???(3); 0???2??(3); 0???2??(4); ?+2?+3?+v+2w+3x+4y+5z+m=8????(5); and 0 < ? ? + v + w + x + y + z ? 0.1 , preferably, 0 < ? ? + v + w + x + y + z ? 0.05 . Methods for preparing these compounds.

Abstract: Process for the preparation of an insertion compound of an alkali metal in which the following successive stages are carried out: a) an organic complex of a transition metal or of a mixture of transition metals M in an oxidation state of greater than 2 is brought into contact with an alkali metal A in the ionic form and with an entity of formula Hb (XO4), where X is chosen from Si, S, Al, P, Ge, As or Mo and b has a value from 0 to 5, in a liquid medium in a closed chamber; the chamber is brought to a temperature T which makes possible the decomposition of the organic complex in the the said liquid medium; the temperature and the pressure in the chamber are brought back to ambient temperature and atmospheric pressure and the insertion compound for an alkali metal of formula AMXO4, in which M is in the +2 oxidation state, is recovered.

Abstract: Lithium insertion compound having the following formula (I): Li?M?M1vM2wM3xM4yM5zB?(XO4??Z?)1??(I) M is selected from V2+, Mn2+, Fe2+, Co2+ and Ni2+; M1 is selected from Na+ and K+; M2 is selected from Mg2+, Zn2+, Cu2+, Ti2+, and Ca2+; M3 is selected from Al3+, Ti3+, Cr3+, Fe3+, Mn3+, Ga3+, and V3+; M4 is selected from Ti4+, Ge4+, Sn4+, V4+, and Zr4+; M5 is selected from V5+, Nb5+, and Ta5+; X is an element in oxidation state m, exclusively occupying a tetrahedral site and coordinated by oxygen or a halogen, which is selected from B3+, Al3+, V5+, Si4+, P5+, S6+, Ge4+ and mixtures thereof; Z is a halogen selected from F, Cl, Br and I; the coefficients ?, ?, v, w, x, y, z, ? and ? are all positive and satisfy the following equations: 0???2??(1) 1???2??(2); 0<???(3); 0???2??(3); 0???2??(4); ?+2?+3?+v+2w+3x+4y+5z+m=8????(5); and 0 < ? ? + v + w + x + y + z ? 0.1 , preferably, 0 < ? ? + v + w + x + y + z ? 0.05 . Methods for preparing these compounds.