Abstract: An electrode is included in a base substrate. A trench is produced in the base substrate. The trench is filled with an annealed amorphous material to form the electrode. The electrode is made of a crystallized material which includes particles that are implanted into a portion of the electrode that is located adjacent the front-face side of the base substrate.

Abstract: An electrode is included in a base substrate. A trench is produced in the base substrate. The trench is filled with an annealed amorphous material to form the electrode. The electrode is made of a crystallized material which includes particles that are implanted into a portion of the electrode that is located adjacent the front-face side of the base substrate.

Abstract: An integrated circuit includes a silicon-on-insulator wafer and interconnect layer providing a support for a coplanar waveguide formed above a top side of the support. A through-silicon via is formed from a back side of the support and passing through the silicon-on-insulator wafer to reach the interconnect layer. A trench is formed from the back side of the support underneath the coplanar waveguide. The trench extends over at least an entire length of the coplanar waveguide. The trench passes through the silicon-on-insulator wafer to reach the interconnect layer and may have a substantially same depth as the through-silicon via.

Abstract: An integrated circuit includes a silicon-on-insulator wafer and interconnect layer providing a support for a coplanar waveguide formed above a top side of the support. A through-silicon via is formed from a back side of the support and passing through the silicon-on-insulator wafer to reach the interconnect layer. A trench is formed from the back side of the support underneath the coplanar waveguide. The trench extends over at least an entire length of the coplanar waveguide. The trench passes through the silicon-on-insulator wafer to reach the interconnect layer and may have a substantially same depth as the through-silicon via.

Abstract: A method for producing a capacitor stack in one portion of a substrate, the method including: forming a cavity along a thickness of the portion of the substrate from an upper face of the substrate, depositing a plurality of layers contributing to the capacitor stack onto the wall of the cavity and onto the surface of the upper face, and removing matter from the layers until the surface of the upper face is reached. The forming of the cavity includes forming at least one trench and, associated with each trench, at least one box. The at least one trench includes a trench outlet that opens into the box. The box includes a box outlet that opens at the surface of the upper face, and the box outlet being shaped to be larger than the trench outlet.

Abstract: An integrated circuit includes a silicon-on-insulator wafer and interconnect layer providing a support for a coplanar waveguide formed above a top side of the support. A through-silicon via is formed from a back side of the support and passing through the silicon-on-insulator wafer to reach the interconnect layer. A trench is formed from the back side of the support underneath the coplanar waveguide. The trench extends over at least an entire length of the coplanar waveguide. The trench passes through the silicon-on-insulator wafer to reach the interconnect layer and may have a substantially same depth as the through-silicon via.

Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

Abstract: In one embodiment there is disclosed a method for manufacturing an integrated circuit in a semiconductor substrate including through vias and a coplanar line, including the steps of: forming active components and a set of front metallization levels; simultaneously etching from the rear surface of the substrate a through via hole and a trench crossing the substrate through at least 50% of its height; coating with a conductive material the walls and the bottom of the hole and of the trench; and filling the hole and the trench with an insulating filling material; and forming a coplanar line extending on the rear surface of the substrate, in front of the trench and parallel thereto, so that the lateral conductors of the coplanar line are electrically connected to the conductive material coating the walls of the trench.

Abstract: In one embodiment there is disclosed a method for manufacturing an integrated circuit in a semiconductor substrate including through vias and a coplanar line, including the steps of: forming active components and a set of front metallization levels; simultaneously etching from the rear surface of the substrate a through via hole and a trench crossing the substrate through at least 50% of its height; coating with a conductive material the walls and the bottom of the hole and of the trench; and filling the hole and the trench with an insulating filling material; and forming a coplanar line extending on the rear surface of the substrate, in front of the trench and parallel thereto, so that the lateral conductors of the coplanar line are electrically connected to the conductive material coating the walls of the trench.

Abstract: In one embodiment there is disclosed a method for manufacturing an integrated circuit in a semiconductor substrate including through vias and a coplanar line, including the steps of: forming active components and a set of front metallization levels; simultaneously etching from the rear surface of the substrate a through via hole and a trench crossing the substrate through at least 50% of its height; coating with a conductive material the walls and the bottom of the hole and of the trench; and filling the hole and the trench with an insulating filling material; and forming a coplanar line extending on the rear surface of the substrate, in front of the trench and parallel thereto, so that the lateral conductors of the coplanar line are electrically connected to the conductive material coating the walls of the trench.

Abstract: An integrated circuit includes a silicon-on-insulator wafer and interconnect layer providing a support for a coplanar waveguide formed above a top side of the support. A through-silicon via is formed from a back side of the support and passing through the silicon-on-insulator wafer to reach the interconnect layer. A trench is formed from the back side of the support underneath the coplanar waveguide. The trench extends over at least an entire length of the coplanar waveguide. The trench passes through the silicon-on-insulator wafer to reach the interconnect layer and may have a substantially same depth as the through-silicon via.

Abstract: An integrated circuit includes a silicon-on-insulator wafer and interconnect layer providing a support for a coplanar waveguide formed above a top side of the support. A through-silicon via is formed from a back side of the support and passing through the silicon-on-insulator wafer to reach the interconnect layer. A trench is formed from the back side of the support underneath the coplanar waveguide. The trench extends over at least an entire length of the coplanar waveguide. The trench passes through the silicon-on-insulator wafer to reach the interconnect layer and may have a substantially same depth as the through-silicon via.

Abstract: A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled to the interconnect. A through-silicon via passes through the substrate having at one end a first contact face electrically coupled to a second electrically conductive zone placed on said second side of the substrate and at the other end a part electrically coupled to the interconnect part. The two first contact faces are located in the same plane.

Abstract: A semiconductor device includes a substrate wafer and having a front face and a back face. A front hole is formed in the front face and a multilayer capacitor is formed in the front hole. A back hole is formed in the back face of the substrate wafer to expose at least a portion of the multilayer capacitor. A front electrical connection on the front face and a back electrical connection in the back hole are used to make electrical connection to first and second conductive plates of the multilayer capacitor which are separated by a dielectric layer. The front hole may have a cylindrical shape or an annular shape.

Abstract: A method for producing a capacitor stack in one portion of a substrate, the method including: forming a cavity along a thickness of the portion of the substrate from an upper face of the substrate, depositing a plurality of layers contributing to the capacitor stack onto the wall of the cavity and onto the surface of the upper face, and removing matter from the layers until the surface of the upper face is reached. The forming of the cavity includes forming at least one trench and, associated with each trench, at least one box. The at least one trench includes a trench outlet that opens into the box. The box includes a box outlet that opens at the surface of the upper face, and the box outlet being shaped to be larger than the trench outlet.

Abstract: A chip provided with through vias wherein the vias are formed of an opening with insulated walls coated with a conductive material and filled with an easily deformable insulating material, elements of connection to another chip being arranged in front of the easily deformable insulating material.

Abstract: A link device for three-dimensional integrated structure may include a module having a first end face designed to be in front of a first element of the structure, and a second end face designed to be placed in front of a second element of the structure. The two end faces may be substantially parallel, and the module including a substrate having a face substantially perpendicular to the two end faces and carrying an electrically conducting pattern formed in a metallization level on top of the face and enclosed in an insulating region. The electrically conducting pattern may include a first end part emerging onto the first end face and a second end part emerging onto the second end face and connected to the first end part.

Abstract: A transmission line formed in a device including a stack of first and second chips having their front surfaces facing each other and wherein a layer of a filling material separates the front surface of the first chip from the front surface of the second chip, this line including: a conductive strip formed on the front surface side of the first chip in at least one metallization level of the first chip; and a ground plane made of a conductive material formed in at least one metallization level of the second chip.

Abstract: A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled to the interconnect. A through-silicon via passes through the substrate having at one end a first contact face electrically coupled to a second electrically conductive zone placed on said second side of the substrate and at the other end a part electrically coupled to the interconnect part. The two first contact faces are located in the same plane.

Abstract: A dielectric wafer has, on top of its front face, a front electrical connection including an electrical connection portion. A blind hole passes through from a rear face of the wafer to at least partially reveal a rear face of the electrical connection portion. A through capacitor is formed in the blind hole. The capacitor includes a first conductive layer covering the lateral wall and the electrical connection portion (forming an outer electrode), a dielectric intermediate layer covering the first conductive layer (forming a dielectric membrane), and a second conductive layer covering the dielectric intermediate layer (forming an inner electrode). A rear electrical connection is made to the inner electrode.