Abstract: In one general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers each having a magnetic moment less than 100 emu/cc, and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers is doped with oxygen. In another general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers has an oxygen content of greater than 0.5 vol %. An average pitch of magnetic grains in a lowermost of the magnetic layers is 9 nm or less. A lowermost of the magnetic layers has an oxide content of at least 20 vol %.

Abstract: In one general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers each having a magnetic moment less than 100 emu/cc, and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers is doped with oxygen. In another general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers has an oxygen content of greater than 0.5 vol %. An average pitch of magnetic grains in a lowermost of the magnetic layers is 9 nm or less. A lowermost of the magnetic layers has an oxide content of at least 20 vol %.

Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.

Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.