Patents by Inventor Sylvia Lo

Sylvia Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Through silicon via with embedded barrier pad
    Patent number: 8980741
    Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: March 17, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Sylvia Lo, Jing-Cheng Lin, Yen-Hung Chen, Wen-Chih Chiou
  • Through Silicon Via with Embedded Barrier Pad
    Publication number: 20140287581
    Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.
    Type: Application
    Filed: June 9, 2014
    Publication date: September 25, 2014
    Inventors: Yung-Chi Lin, Sylvia Lo, Jing-Cheng Lin, Yen-Hung Chen, Wen-Chih Chiou
  • Through silicon via with embedded barrier pad
    Patent number: 8772945
    Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: July 8, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Wen-Chih Chiou, Yen-Hung Chen, Sylvia Lo, Jing-Cheng Lin
  • Through Silicon Via with Embedded Barrier Pad
    Publication number: 20130285244
    Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.
    Type: Application
    Filed: April 27, 2012
    Publication date: October 31, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Chi Lin, Wen-Chih Chiou, Yen-Hung Chen, Sylvia Lo, Jing-Cheng Lin