Abstract: The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterized in that it comprises the steps of: a) functionalizing the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle. The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

Abstract: The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterised in that it comprises the steps of: a) functionalising the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle. The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

Abstract: The invention relates to a method for forming, on a conductive plastic substrate, a 2D crystalline layer based on zinc oxide, possibly doped, characterized in that: the 2D layer is formed by electrochemical deposition; the electrochemical deposition is performed at a temperature ranging between 55° C. and 65° C.; the electrochemical deposition is performed in the presence of oxygen, by means of a solution including a zinc source at a concentration ranging between 2.5 mM and 7 mM; and a supporting electrolyte at a concentration ranging between 0.06 M et 0.4 M.