Abstract: An optoelectronic device including a support, at least hydrophilic photoluminescent blocks including hydrophilic photoluminescent particles covering first areas of the support and hydrophobic photoluminescent blocks including hydrophobic photoluminescent particles covering second areas of the support, the hydrophilic photoluminescent blocks being in contact with a hydrophilic material in the first areas and the hydrophobic photoluminescent blocks being in contact with a hydrophobic material in the second areas.

Abstract: An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.

Abstract: A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Abstract: A method for selectively filling, with a filling liquid, a first cavity from among a plurality of cavities, each cavity opening out at a front face of a substrate. The method includes a processing step for altering the surface energy of the first internal surface of the first cavity or the surface energy of the second internal surfaces of the other cavities, such that the first surface has a first surface energy and the second surfaces have a second surface energy and a step including a sequence for spreading the filling liquid, the first energy and the second energy being adjusted such that the first and the second surfaces exert an attracting effect and a repelling effect, respectively, on the liquid.

Abstract: An optoelectronic device including a support, at least hydrophilic photoluminescent blocks including hydrophilic photoluminescent particles covering first areas of the support and hydrophobic photoluminescent blocks including hydrophobic photoluminescent particles covering second areas of the support, the hydrophilic photoluminescent blocks being in contact with a hydrophilic material in the first areas and the hydrophobic photoluminescent blocks being in contact with a hydrophobic material in the second areas.

Abstract: An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.

Abstract: An emitting device comprising a first light emitter adapted to emit a first radiation and comprising at least one first semiconducting structure comprising a first semiconducting layer adapted to emit the first radiation, a second light emitter adapted to emit a second radiation different from the first radiation, the second light emitter comprising at least one second semiconducting structure comprising a second semiconducting layer adapted to emit the second radiation, and a third light emitter adapted to emit a third radiation different from the second and first radiations, the third light emitter comprising at least one third semiconducting layer adapted to emit a fourth radiation different from the third radiation, the third light emitter further comprising a radiation converter configured to convert the fourth radiation into the third radiation.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Abstract: A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.

Abstract: An optoelectronic device including first, and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same.

Abstract: A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.