Patents by Inventor Sylvian Barraud

Sylvian Barraud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing processing for an isolated transistor with strained channel
    Patent number: 7635615
    Abstract: Transistor type semiconducting device comprising: a substrate, an insulating layer comprising sidewalls formed on each part of the source zone and the drain zone, drain, channel and source zones, the channel zone being formed on the insulating layer and being strained by the drain and the source zones, between the side parts, a grid, separated from the channel by a grid insulator.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: December 22, 2009
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Jean-Charles Barbe, Sylvian Barraud, Claire Fenouillet-Beranger, Claire Gallon, Aomar Halimaoui
  • Manufacturing processing for an isolated transistor with strained channel
    Publication number: 20070001227
    Abstract: Transistor type semiconducting device comprising: a substrate, an insulating layer comprising sidewalls formed on each part of the source zone and the drain zone, drain, channel and source zones, the channel zone being formed on the insulating layer and being strained by the drain and the source zones, between the side parts, a grid, separated from the channel by a grid insulator.
    Type: Application
    Filed: June 16, 2006
    Publication date: January 4, 2007
    Inventors: Jean-Charles Barbe, Sylvian Barraud, Claire Fenouillet-Beranger, Claire Gallon, Aomar Halimaoui