Patents by Inventor Sylvie Archambault

Sylvie Archambault has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protection capsule for MEMS devices
    Patent number: 7682860
    Abstract: A method of making a MEMS device is disclosed wherein anhydrous HF exposed silicon nitride is used as a temporary adhesion layer to permit the transfer of a layer from a carrier substrate to a receiving substrate.
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: March 23, 2010
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Veronique Giard, Sylvie Archambault, Paul Ignatiuk
  • PROTECTION CAPSULE FOR MEMS DEVICES
    Publication number: 20070231943
    Abstract: A method of making a MEMS device is disclosed wherein anhydrous HF exposed silicon nitride is used as a temporary adhesion layer to permit the transfer of a layer from a carrier substrate to a receiving substrate.
    Type: Application
    Filed: March 16, 2007
    Publication date: October 4, 2007
    Applicant: DALSA SEMICONDUCTOR INC.
    Inventors: Luc Ouellet, Veronique Giard, Sylvie Archambault, Paul Ignatiuk
  • Method of preventing cracking in optical quality silica layers
    Patent number: 6749893
    Abstract: A method for making an integrated photonic device involves depositing buffer, core and cladding layers on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: June 15, 2004
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Jonathan Lachance, Sylvie Archambault
  • Method of preventing cracking in optical quality silica layers
    Publication number: 20030143334
    Abstract: A method is disclosed for making an integrated photonic device having buffer, core and cladding layers deposited on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.
    Type: Application
    Filed: January 31, 2002
    Publication date: July 31, 2003
    Inventors: Luc Ouellet, Jonathan Lachance, Sylvie Archambault