Abstract: A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.

Abstract: A Hall effect sensor formed in a multilayer structure including a thin active layer deposited on a substrate, wherein the substrate is an insulating, semi-insulating or semiconductor material of type p− or n+, respectively, to electrically isolate the active layer of the substrate and wherein the active layer is a weakly doped semiconductor material of type n− or p− in an exhaustion regime.

Abstract: A monolithic pressure and/or temperature transducer comprises at least two sensitive semiconductor layers of III-V material sensitive to pressure and to temperature and supported by a common substrate of III-V material, which two layers comprise: a first layer doped with donor type impurities at a first concentration and having a first resistivity as a function of pressure and of temperature; and a second layer doped with donor type impurities at a second concentration different from the first concentration and having a second resistivity as a function of pressure and of temperature, which second resistivity depends on temperature in a different manner than the first resistivity.