Patents by Inventor Sylvie Morin

Sylvie Morin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivation of porous semiconductors
    Patent number: 7332441
    Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: February 19, 2008
    Assignee: National Research Council of Canada
    Inventors: Rabah Boukherroub, Danial D. M. Wayner, David J. Lockwood, Sylvie Morin
  • Passivation of porous semiconductors
    Patent number: 6815162
    Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: November 9, 2004
    Assignee: National Research Council of Canada
    Inventors: Rabah Boukherroub, Danial D. M. Wayner, David J. Lockwood, Sylvie Morin
  • Passivation of porous semiconductors
    Publication number: 20040198054
    Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.
    Type: Application
    Filed: April 23, 2004
    Publication date: October 7, 2004
    Applicant: National Research Council of Canada
    Inventors: Rabah Boukherroub, Danial D.M. Wayner, David J. Lockwood, Sylvie Morin
  • Passivation of porous semiconductors
    Publication number: 20020127326
    Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.
    Type: Application
    Filed: March 12, 2001
    Publication date: September 12, 2002
    Inventors: Rabah Boukherroub, Danial D.M. Wayner, David J. Lockwood, Sylvie Morin