Patents by Inventor Syogo Kawahigashi

Syogo Kawahigashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having silicon on insulator structure and method of fabricating the same
    Patent number: 7492009
    Abstract: A semiconductor device capable of making an effective use of a support substrate as interconnect is proposed. The semiconductor device (chip 4) of the present invention has a first Si substrate 1 as a support substrate and a second Si substrate 3 which is layered on a first insulating film layered on one main surface of the first Si substrate 1. A diffusion layer 2 used as a support substrate interconnect is formed at least in a part of the surficial portion of the first Si substrate 1 on the side thereof in contact with the first SiO2 film 9.
    Type: Grant
    Filed: October 1, 2004
    Date of Patent: February 17, 2009
    Assignee: Nec Electronics Corporation
    Inventor: Syogo Kawahigashi
  • Semiconductor device and method of fabricating the same
    Publication number: 20050042808
    Abstract: A semiconductor device capable of making an effective use of a support substrate as interconnect is proposed. The semiconductor device (chip 4) of the present invention has a first Si substrate 1 as a support substrate and a second Si substrate 3 which is layered on a first insulating film layered on one main surface of the first Si substrate 1. A diffusion layer 2 used as a support substrate interconnect is formed at least in a part of the surficial portion of the first Si substrate 1 on the side thereof in contact with the first SiO2 film 9.
    Type: Application
    Filed: October 1, 2004
    Publication date: February 24, 2005
    Inventor: Syogo Kawahigashi