Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n??(1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R??(1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).

Abstract: A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-A?O—CH2—]n??(1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition.

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.

Abstract: A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.

Abstract: A positive resist composition for immersion exposure that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the resin component (A) includes a resin (A1) that has alkali-soluble groups (i) having a hydrogen atom, and in a portion of these alkali-soluble groups (i), the hydrogen atom is substituted with an acid-dissociable, dissolution-inhibiting group (I) represented by a general formula (I) shown below [wherein, Z represents an aliphatic cyclic group; n represents either 0 or an integer from 1 to 3; and R1 and R2 each represent, independently, a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms].

Abstract: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition.

Abstract: A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).

Abstract: A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n??(1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R??(1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).

Abstract: A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.