Patents by Inventor Syoichi Abe

Syoichi Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma process device and plasma process method
    Patent number: 8394231
    Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
    Type: Grant
    Filed: January 23, 2007
    Date of Patent: March 12, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Koichi Takatsuki, Hikaru Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori, Shuuichi Ishizuka, Syoichi Abe, Takashi Suzuki, Kohei Kawamura, Hidenori Miyoshi, Gishi Chung, Yasuhiro Oshima, Hiroyuki Takahashi
  • Plasma treatment device
    Publication number: 20070158027
    Abstract: In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).
    Type: Application
    Filed: February 5, 2007
    Publication date: July 12, 2007
    Applicant: Tokyo Electron Limited
    Inventors: Makoto Aoki, Hikaru Yoshitaka, Yoshihiro Kato, Shigeo Ashigaki, Syoichi Abe
  • Plasma process device and plasma process method
    Publication number: 20070131171
    Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
    Type: Application
    Filed: January 23, 2007
    Publication date: June 14, 2007
    Applicant: Tokyo Electron Limited
    Inventors: Koichi Takatsuki, Hikaru Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori, Shuuichi Ishizuka, Syoichi Abe, Takashi Suzuki, Kohei Kawamura, Hidenori Miyoshi, Gishi Chung, Yasuhiro Oshima, Hiroyuki Takahashi
  • Plasma treatment device
    Publication number: 20040159286
    Abstract: In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).
    Type: Application
    Filed: March 5, 2004
    Publication date: August 19, 2004
    Inventors: Makoto Aoki, Hiraku Yoshitaka, Yoshihiro Kato, Shigeo Ashigaki, Syoichi Abe
  • Plasma processing device and plasma processing method
    Publication number: 20040127033
    Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
    Type: Application
    Filed: January 29, 2004
    Publication date: July 1, 2004
    Inventors: Koichi Takatsuki, Hiraku Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori, Shuuichi Ishizuka, Syoichi Abe, Takashi Suzuki, Kohei Kawamura, Hidenori Miyoshi, Gishi Chung, Yasuhiro Oshima, Hiroyuki Takahashi