Patents by Inventor Syota YAMABATA

Syota YAMABATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
    Patent number: 9099534
    Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: August 4, 2015
    Assignee: Sony Corporation
    Inventors: Kazuto Watanabe, Atsushi Matsushita, Hiroshi Horikoshi, Iwao Sugiura, Yuuji Nishimura, Syota Yamabata
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
    Publication number: 20140329353
    Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
    Type: Application
    Filed: June 30, 2014
    Publication date: November 6, 2014
    Applicant: SONY CORPORATION
    Inventors: Kazuto Watanabe, Atsushi Matsushita, Hiroshi Horikoshi, Iwao Sugiura, Yuuji Nishimura, Syota Yamabata
  • Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
    Patent number: 8786089
    Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: July 22, 2014
    Assignee: Sony Corporation
    Inventors: Kazuto Watanabe, Atsushi Matsushita, Hiroshi Horikoshi, Iwao Sugiura, Yuuji Nishimura, Syota Yamabata
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
    Publication number: 20120211879
    Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
    Type: Application
    Filed: January 26, 2012
    Publication date: August 23, 2012
    Applicant: Sony Corporation
    Inventors: Kazuto WATANABE, Atsushi MATSUSHITA, Hiroshi HORIKOSHI, Iwao SUGIURA, Yuuji NISHIMURA, Syota YAMABATA