Abstract: A first insulating film includes five extension lines formed between connection pad portions of adjacent two predetermined wiring lines. The first insulating film also includes peripheral portions of the adjacent two connection pad portions on both sides of the five extension lines. A second insulating film made of a polyimide resin or the like is formed on the upper surface of the first insulating layer by a screen printing method or ink jet method. Since a short circuit may be easily caused by electromigration in a region where the five extension lines are parallel to another, the short circuit due to the electromigration can be prevented by covering only that region with the second insulating film. Accordingly, the region where the second insulating film is formed can be as small as possible, and the semiconductor wafer does not easily warp.

Abstract: A semiconductor device includes a semiconductor substrate which has a plurality of semiconductor device formation regions and alignment mark formation region having the same planar size as that of the semiconductor device formation region, a plurality of post electrodes which are formed in each semiconductor device formation region, and an alignment post electrode which is formed in the alignment mark formation region and smaller in number than the post electrodes formed in each semiconductor device formation region.

Abstract: A first insulating film includes five extension lines formed between connection pad portions of adjacent two predetermined wiring lines. The first insulating film also includes peripheral portions of the adjacent two connection pad portions on both sides of the five extension lines. A second insulating film made of a polyimide resin or the like is formed on the upper surface of the first insulating layer by a screen printing method or ink jet method. Since a short circuit may be easily caused by electromigration in a region where the five extension lines are parallel to another, the short circuit due to the electromigration can be prevented by covering only that region with the second insulating film. Accordingly, the region where the second insulating film is formed can be as small as possible, and the semiconductor wafer does not easily warp.

Abstract: A semiconductor device includes a semiconductor substrate which has a plurality of semiconductor device formation regions and alignment mark formation region having the same planar size as that of the semiconductor device formation region, a plurality of post electrodes which are formed in each semiconductor device formation region, and an alignment post electrode which is formed in the alignment mark formation region and smaller in number than the post electrodes formed in each semiconductor device formation region.